Direct measurement of individual deep traps in single silicon nanowires

Nano Letters

Volumn 11, Issue 6, 2011, Pages 2499-2502

  Koren, E ^a   Elias, G ^a   Boag, A ^a   Hemesath, E R ^b   Lauhon, L J ^b   Rosenwaks, Y ^a  

^a TEL AVIV UNIVERSITY   (Israel)

^b Northwestern University   (United States)

Author keywords

Au atoms; deep traps; KPFM; nanowire; Silicon

Indexed keywords

AU CATALYSTS; BACK-GATE; CATALYST MATERIAL; DEEP TRAPS; DIRECT MEASUREMENT; GAP STATE; KELVIN PROBE FORCE MICROSCOPY; KPFM; NANO-CATALYST; NANOWIRE TRANSISTORS; SEMICONDUCTOR NANOWIRE; SI NANOWIRE; SILICON NANOWIRES; TRAP ENERGY LEVELS; TRAP STATE; TRAPPING CENTERS; VLS GROWTH;

CATALYSTS; SEMICONDUCTING SILICON;

NANOWIRES;

GOLD; NANOWIRE; SILICON;

ARTICLE; CATALYSIS; CHEMISTRY; SEMICONDUCTOR; SURFACE PROPERTY;

CATALYSIS; GOLD; NANOWIRES; SEMICONDUCTORS; SILICON; SURFACE PROPERTIES; TRANSISTORS, ELECTRONIC;

EID: 79958797849     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl201019b     Document Type: Article

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