Current and potential characterization on InAs nanowires by contact-mode atomic force microscopy and Kelvin probe force microscopy

Ultramicroscopy

Volumn 91, Issue 1-4, 2002, Pages 127-132

  Ono, Shiano ^a   Takeuchi, Misaichi ^b   Takahashi, Takuji ^a  

^a INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

^b INST OF PHYS AND CHEMICAL RESEARCH   (Japan)

Author keywords

Atomic force microscopy; Current distribution; GaAs giant steps; InAs nanowires; Kelvin probe force microscopy; Surface potential distribution

Indexed keywords

CHARACTERIZATION; NANOSTRUCTURED MATERIALS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SURFACE PROPERTIES;

KELVIN PROBE FORCE MICROSCOPY (KFM);

ATOMIC FORCE MICROSCOPY;

GALLIUM; INDIUM;

ARTICLE; ATOMIC FORCE MICROSCOPY; ELECTRIC POTENTIAL; KELVIN PROBE FORCE MICROSCOPY; MEASUREMENT; MICROSCOPY;

EID: 0036329409     PISSN: 03043991     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0304-3991(02)00091-8     Document Type: Article

References (11)