Controlled and selective area growth of monolayer graphene on 4H-SiC substrate by electron-beam-assisted rapid heating

Journal of Physical Chemistry C

Volumn 117, Issue 37, 2013, Pages 19195-19202

  Dharmaraj, P ^a   Jeganathan, K ^a   Gokulakrishnan, V ^a   Sundara Venkatesh, P ^a   Parameshwari, R ^a   Ramakrishnan, V ^c   Balakumar, S ^d   Asokan, K ^e   Ramamurthi, K ^b  

^a BHARATHIDASAN UNIVERSITY   (India)

^b SRM INSTITUTE OF SCIENCE AND TECHNOLOGY   (India)

^c MADURAI KAMARAJ UNIVERSITY   (India)

^d UNIVERSITY OF MADRAS   (India)

^e INTER UNIVERSITY ACCELERATOR CENTRE   (India)

Author keywords

[No Author keywords available]

Indexed keywords

E-BEAM IRRADIATION; ELECTRONIC APPLICATION; ENERGY OF ELECTRON; EPITAXIAL GRAPHENE; LOCALIZED INTERACTION; PRIMARY ELECTRONS; SELECTIVE AREA GROWTH; THERMALLY INDUCED;

EPITAXIAL GROWTH; IRRADIATION; KINETICS; SILICON; SILICON CARBIDE; SILICON WAFERS; SUBLIMATION; SUBSTRATES;

GRAPHENE;

EID: 84884575261     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp404483y     Document Type: Article

References (41)

1. Novoselov, K. S.; Geim, A. K.; Morozov, S. V.; Jiang, D.; Zhang, Y.; Dubonos, S. V.; Grigorieva, I. V.; Firsov, A. A. Electric Field Effect in Atomically Thin Carbon Films Science 2004, 306, 666-669
2. Geim, A. K.; Novoselov, K. S. The Rise of Graphene Nat. Mater. 2007, 6, 183-191
3. Park, C.-H.; Yang, L.; Son, Y.-W.; Cohen, M. L.; Louie, S. G. Anisotropic Behaviours of Massless Dirac Fermions in Graphene under Periodic Potentials Nat. Phys. 2008, 4, 213-217
4. Li, X.; Cai, W.; An, J.; Kim, S.; Nah, J.; Yang, D.; Piner, R.; Velamkanni, A.; Jung, I.; Tutuc, E. Large-Area Synthesis of High-Quality and Uniform Graphene Films on Copper Foils Science 2009, 324, 1312-1314
5. Emtsev, K. V.; Bostwick, A.; Horn, K.; Jobst, J.; Kellogg, G. L.; Ley, L.; McChesney, J L.; Ohta, T.; Reshanov, S. A.; Röhrl, J. Towards Wafer-Size Graphene Layers by Atmospheric Pressure Graphitization of Silicon Carbide Nat. Mater. 2009, 8, 203-207
6. Sprinkle, M.; Ruan, M.; Hu, Y.; Hankinson, J.; Rubio-Roy, M.; Zhang, B.; Wu, X.; Berger, C.; de Heer, W. A. Scalable Templated Growth of Graphene Nanoribbons on SiC Nat. Nanotechnol. 2010, 5, 727-731
7. 2-Laser-Induced Growth of Epitaxial Graphene on 6H-SiC (0001) Adv. Funct. Mater. 2012, 22, 113-120
8. Lee, S.; Toney, M. F.; Ko, W.; Randel, J. C.; Jung, H. J.; Munakata, K.; Lu, J.; Geballe, T. H.; Beasley, M. R.; Sinclair, R.; Manoharan, H. C.; Salleo, A. Laser-Synthesized Epitaxial Graphene ACS Nano 2010, 4, 7524-7530
9. Park, S.; Ruoff, R. S. Chemical Methods for the Production of Graphene Nat. Nanotechnol. 2009, 4, 217-224
10. Kim, K.; Choi, J.-Y.; Kim, T.; Cho, S.-H.; Chung, H.-J. A Role for Graphene in Silicon-Based Semiconductor Devices Nature 2011, 479, 338-344
11. Schwierz, F. Graphene Transistors Nat. Nanotechnol. 2010, 5, 487-496
12. Tsen, A. W.; Brown, L.; Levendorf, M. P.; Ghahari, F.; Huang, P. Y.; Havener, R. W.; Ruiz-Vargas, C. S.; Muller, D. A.; Kim, P.; Park, J. Tailoring Electrical Transport Across Grain Boundaries in Polycrystalline Graphene Science 2012, 336, 1143-1146
13. Gu, G.; Nie, S.; Feenstra, R. M.; Devaty, R. P.; Choyke, W. J.; Chan, W. K.; Kane, M. G. Field Effect in Epitaxial Graphene on a Silicon Carbide Substrate Appl. Phys. Lett. 2007, 90, 253507
14. Peng, X.; Ahuja, R. Symmetry Breaking Induced Band Gap in Epitaxial Graphene Layers on SiC Nano Lett. 2008, 8, 4464-4468
15. Zhou, S. Y.; Gweon, G.-H.; Fedorov, A. V.; First, P. N.; de Heer, W. A.; Lee, D.-H.; Guinea, F.; Costro Neto, A. H.; Lanzara, A. Substrate-Induced Bandgap Opening in Epitaxial Graphene Nat. Mater. 2007, 6, 770-775
16. Tzalenchuk, A.; Lara-Avila, S.; Kalaboukhov, A.; Paolillo, S.; Syvajarvi, M.; Yakimova, R.; Kazakova, O.; Janssen, T. J. B. M.; Fal'ko, V.; Kubatkin, S. Towards a Quantum Resistance Standard Based on Epitaxial Graphene Nat. Nanotechnol. 2010, 5, 186-189
17. Wu, Y.; Jenkins, K. A.; Valdes-Garcia, A.; Farmer, D. B.; Zhu, Y.; Bol, A. A.; Dimitrakopoulos, C.; Zhu, W.; Xia, F.; Avouris, P. State-of-the-Art Graphene High-Frequency Electronics Nano Lett. 2012, 12, 3062-3067
18. Badami, D. V. Graphitization of α-Silicon Carbide Nature 1962, 193, 569-570
19. Bommel, A. J. V.; Crombeen, J. E.; Van Tooren, A. LEED and Auger Electron Observation of the SiC (0001) Surface Surf. Sci. 1975, 48, 463-472
20. Berger, C.; Song, Z.; Li, T.; Li, X.; Ogbazghi, A. Y.; Feng, R.; Dai, Z.; Marchenkov, A. N.; Conrad, E. H.; First, P. N.; de Heer, W. A. Ultrathin Graphite: 2D Electron Gas Properties and a Route Toward Graphene-Based Nanoelectronics J. Phys. Chem. B 2004, 108, 19912-19916
21. Huang, Q.; Chen, X.; Liu, J.; Wang, W.; Wang, G.; Wang, W.; Yang, R.; Liu, Y.; Guo, L. Epitaxial Graphene on 4H-SiC by Pulsed Electron Irradiation Chem. Commun. 2010, 46, 4917-4919
22. Huang, Q.; Guo, L.; Wang, W.; Wang, G.; Wang, W.; Jia, Y. P.; Jing-Jing, L.; Kang, L.; Chen, X. Raman Spectrum of Epitaxial Graphene on SiC (0001) by Pulsed Electron Irradiation Chin. Phys. Lett. 2010, 27, 046803
23. Krasheninnikov, A. V.; Banhart, F. Engineering of Nanostructured Carbon Materials with Electron or Ion Beams Nat. Mater. 2007, 6, 723-733
24. Banhart, F. Irradiation Effects in Carbon Nanostructures Rep. Prog. Phys. 1999, 62, 1181-1221
25. Ishimaru, M.; Bae, I.-T.; Hirotsu, Y. Electron-Beam-Induced Amorphization in SiC Phys. Rev. B 2003, 68, 144102
26. Go, H.; Kwak, J.; Jeon, Y.; Kim, S.-D.; Lee, B. C.; Kang, H. S.; Ko, J.-H.; Kim, N.; Kim, B.-K.; Yoo, J.-W.; Kim, S. W.; Kim, Y.-W.; Kwon, S.-Y.; Park, K. Low Temperature Formation of Epitaxial Graphene on 6H-SiC Induced by Continuous Electron Beam Irradiation Appl. Phys. Lett. 2012, 101, 092105
27. Krauss, B.; Lohmann, T.; Chae, D.-H.; Haluska, M.; von Klitzing, K.; Smet, J. H. Laser-Induced Disassembly of a Graphene Single Crystal into a Nanocrystalline Network Phys. Rev. B 2009, 79, 165428
28. Das, A.; Pisana, S.; Chakraborty, B.; Piscanec, S.; Saha, S. K.; Waghmare, U. V.; Novoselov, K. S.; Krishnamurthy, H. R.; Geim, A. K.; Ferrari, A. C.; Sood, A. K. Monitoring Dopants by Raman Scattering in an Electrochemically Top-Gated Graphene Transistor Nat. Nanotechnol. 2008, 3, 210-215
29. Reina, A.; Jia, X.; Ho, J.; Nezich, D.; Son, H.; Bulovic, V.; Dresselhaus, M. S.; Kong, J. Large Area, Few-Layer Graphene Films on Arbitrary Substrates by Chemical Vapor Deposition Nano Lett. 2009, 9, 30-35
30. Ni, Z. H.; Chen, W.; Fan, X. F.; Kuo, J. L.; Yu, T.; Wee, A. T. S.; Shen, Z. X. Raman Spectroscopy of Epitaxial Graphene on SiC Substrate Phys. Rev. B 2008, 77, 115416
31. Guang, H.; Wong, S. L.; Tin, C.-C.; Luo, Z. Q.; Shen, Z. X.; Chen, W.; Wee, A. T. S. Epitaxial Growth and Characterization of Graphene on Free Standing Polycrystalline SiC J. Appl. Phys. 2011, 110, 014308
32. Röhrl, R.; Hundhausen, M.; Emtsev, K. V.; Seyller, Th.; Graupner, R.; Ley, L. Raman Spectra of Epitaxial Graphene on SiC (0001) Appl. Phys. Lett. 2007, 92, 201918
33. Tuinstra, F.; Koenig, J. L. Raman Spectrum of Graphite The J. Chem. Phys. 1970, 53, 1126-1130
34. Teweldebrhan, D.; Balandin, A. A. Modification of Graphene Properties due to Electron-Beam Irradiation Appl. Phys. Lett. 2009, 94, 013101
35. Kim, K.-J.; Choi, J.; Lee, H.; Lee, H.-K.; Kang, T.-H.; Han, Y.-H.; Lee, B.-C.; Kim, S.; Kim, B. Effects of 1 MeV Electron Beam Irradiation on Multilayer Graphene grown on 6H-SiC (0001) J. Phys.Chem.C 2008, 112, 13062-13064
36. Jones, J. D.; Ecton, P. A.; Mo, Y.; Perez, J. M. Comment on "Modification of graphene properties due to electron-beam irradiation" [Appl. Phys. Lett. 94, 013101 (2009)] Appl. Phys. Lett. 2009, 95, 246101
37. Kim, S.; Zhou, S.; Hu, Y.; Acik, M.; Chabal, Y. J.; Berger, C.; de Heer, W.; Bongiorno, A.; Riedo, E. Room-Temperature Metastability of Multilayer Graphene Oxide Film Nat. Mater. 2012, 11, 544-549
38. Warner, J. H.; Rummeli, M. H.; Ge, L.; Gemming, T.; Montanari, B.; Harrison, N. M.; Buchner, B.; Briggs, G. A. D. Structural Transformations in Graphene Studied with High Spatial and Temporal Resolution Nat. Nanotechnol. 2009, 4, 500-504
39. Emtsev, K. V.; Speck, F.; Seyller, Th.; Ley, L. Interaction, Growth and Ordering of Epitaxial Graphene on SiC {0001} Surfaces: A Comparative Photoelectron Spectroscopy Study Phys. Rev. B 2008, 77, 155303
40. Yakes, M. K.; Gunlycke, D.; Tedesco, J. L.; Campbell, P. M.; Myers-Ward, R. L.; Eddy, C. R., Jr.; Gaskill, D. K.; Sheehan, P. E.; Laracuente, A. R. Conductance Anisotropy in Epitaxial Graphene Sheets Generated by Substrate Interactions Nano Lett. 2010, 10, 1559-1562
41. He, Y. H.; Wang, L.; Chen, X. L.; Wu, Z. F.; Li, W.; Cai, Y.; Wang, N. Modifying Electronic Transport Properties of Graphene by Electron Beam Irradiation Appl. Phys. Lett. 2011, 99, 033109