Properties of mid-ultraviolet light emitting diodes fabricated from pseudomorphic layers on bulk aluminum nitride substrates

Applied Physics Express

Volumn 3, Issue 7, 2010, Pages

  Grandusky, James R ^a   Gibb, Shawn R ^a   Mendrick, Mark C ^a   Schowalter, Leo J ^a  

^a Crystal IS Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE AREA; CONTINUOUS WAVE OPERATION; HIGH CONDUCTIVITY; HIGH QUALITY; LOW-DISLOCATION DENSITY; ON-WAFER MEASUREMENTS; OUTPUT POWER; PEAK WAVELENGTH; PSEUDOMORPHIC LAYERS; PULSED OPERATION; QUANTUM WELL; SMOOTH SURFACE; ULTRAVIOLET LIGHT EMITTING DIODES;

ALUMINUM; ALUMINUM NITRIDE; LIGHT EMISSION; NITRIDES; ULTRAVIOLET RADIATION;

LIGHT EMITTING DIODES;

EID: 77954504618     PISSN: 18820778     EISSN: 18820786     Source Type: Journal    
DOI: 10.1143/APEX.3.072103     Document Type: Article

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