Performance and reliability of ultraviolet-C pseudomorphic light emitting diodes on bulk AlN substrates

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 7, Issue 7-8, 2010, Pages 2199-2201

  Grandusky, James ^a   Cui, Yongjie ^a   Gibb, Shawn ^a   Mendrick, Mark ^a   Schowalter, Leo ^a  

^a Crystal IS Inc   (United States)

Author keywords

AlGaN; Dislocations; Growth; LEDs; Morphology; Photoluminescence; Quantum wells

Indexed keywords

ALGAN; DISLOCATIONS; GROWTH; LEDS; QUANTUM WELL;

DISLOCATIONS (CRYSTALS); ELECTRIC RESISTANCE; LIGHT EMISSION; LIGHT EMITTING DIODES; MORPHOLOGY; NITRIDES; PHOTOLUMINESCENCE; RESISTORS; SEMICONDUCTOR DIODES; SEMICONDUCTOR GROWTH; X RAY DIFFRACTION;

SEMICONDUCTOR QUANTUM WELLS;

EID: 77955818277     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200983635     Document Type: Conference Paper

References (4)

1. EPA Document # 815-D-03-007.
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3. J. R. Grandusky, J. A. Smart, M. C. Mendrick, L. J. Schowalter, K. X. Chen, and E. F. Schubert, J. Cryst. Growth 311, 2864 (2009).
4. C.G. Moe et al., Reliability Physics Symposium, 2009 IEEE International, p. 94 (2009).