Aberration-corrected transmission electron microscopy analyses of GaAs/Si interfaces in wafer-bonded multi-junction solar cells

Ultramicroscopy

Volumn 134, Issue , 2013, Pages 55-61

  Häussler, Dietrich ^a   Houben, Lothar ^b   Essig, Stephanie ^c   Kurttepeli, Mert ^a   Dimroth, Frank ^c   Dunin Borkowski, Rafal E ^b   Jäger, Wolfgang ^a  

^a UNIVERSITY OF KIEL   (Germany)

^b FORSCHUNGSZENTRUM JÜLICH   (Germany)

^c FRAUNHOFER INSTITUTE FOR SOLAR ENERGY SYSTEMS ISE   (Germany)

Author keywords

Aberration corrected STEM EELS; Interfaces; Multi junction solar cell; Wafer bonding

Indexed keywords

ABERRATION-CORRECTED SCANNING TRANSMISSION ELECTRON MICROSCOPIES; ABERRATION-CORRECTED STEM; COMPOSITION FLUCTUATIONS; CONCENTRATOR SOLAR CELLS; ENERGY DISPERSIVE X-RAY SPECTROSCOPY; HIGH-ANGLE ANNULAR DARK FIELDS; III-V COMPOUND SEMICONDUCTOR; MULTI JUNCTION SOLAR CELLS;

CHEMICAL ELEMENTS; ELECTRON ENERGY LOSS SPECTROSCOPY; ENERGY DISPERSIVE SPECTROSCOPY; INTERFACES (MATERIALS); SILICON WAFERS; SOLAR CELLS; TRANSMISSION ELECTRON MICROSCOPY;

WAFER BONDING;

ARSENIC; GALLIUM; SILICON;

ABERRATION CORRECTED SCANNING TRANSMISSION ELECTRON MICROSCOPY; ACCURACY; ARTICLE; BINDING KINETICS; CHEMICAL COMPOSITION; CHEMICAL STRUCTURE; DARK FIELD MICROSCOPE; ELECTRIC CONDUCTIVITY; ELECTRICAL EQUIPMENT; ELECTRON ENERGY LOSS SPECTROSCOPY; ENERGY DISPERSIVE X RAY SPECTROSCOPY; FAST ATOM BEAM; ION BEAM; PROCESS OPTIMIZATION; QUALITY CONTROL PROCEDURES; QUANTITATIVE ANALYSIS; RADIATION BEAM; ROENTGEN SPECTROSCOPY; SCANNING TRANSMISSION ELECTRON MICROSCOPY; SEMICONDUCTOR; WAFER BONDED MULTIJUNCTION SOLAR CELL;

EID: 84883555728     PISSN: 03043991     EISSN: 18792723     Source Type: Journal    
DOI: 10.1016/j.ultramic.2013.07.005     Document Type: Article

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