Misfit dislocation blocking by dilute nitride intermediate layers

Applied Physics Letters

Volumn 92, Issue 8, 2008, Pages

  Schone J ^a,b   Spiecker, E ^b   Dimroth, F ^a   Bett, A W ^a   Jager W ^b  

^a FRAUNHOFER INSTITUTE FOR SOLAR ENERGY SYSTEMS ISE   (Germany)

^b UNIVERSITY OF KIEL   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BUFFER LAYERS; DEFECTS; DISLOCATIONS (CRYSTALS); METALLORGANIC VAPOR PHASE EPITAXY; STRAIN; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

BUFFER STRUCTURE; DISLOCATION FORMATION; MISFIT DISLOCATION BLOCKING; SEMICONDUCTOR TECHNOLOGY;

NITRIDES;

EID: 40049098533     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2888750     Document Type: Article

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