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Volumn 66, Issue 1-4, 2001, Pages 541-550

Advanced III-V solar cell structures grown by MOVPE

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL REACTORS; CRYSTAL LATTICES; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH; SILICON WAFERS; SOLAR CONCENTRATORS;

EID: 0035254792     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0927-0248(00)00236-1     Document Type: Article
Times cited : (23)

References (17)
  • 5
  • 16
    • 0033740560 scopus 로고    scopus 로고
    • 25.5% efficient Ga0.35In0.65P/Ga0.83In0.17As tandem solar cells grown on GaAs substrates
    • F. Dimroth, U. Schubert, A.W. Bett, 25.5% efficient Ga0.35In0.65P/Ga0.83In0.17As tandem solar cells grown on GaAs substrates, IEEE Electron Dev. Lett. 21(5) (2000).
    • (2000) IEEE Electron Dev. Lett. , vol.21 , Issue.5
    • Dimroth, F.1    Schubert, U.2    Bett, A.W.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.