Large current modulation and spin-dependent tunneling of vertical graphene/MoS2 heterostructures

ACS Nano

Volumn 7, Issue 8, 2013, Pages 7021-7027

  Myoung, Nojoon ^a   Seo, Kyungchul ^a   Lee, Seung Joo ^b   Ihm, G ^a  

^a Chungnam National University   (South Korea)

^b Dongguk University   (South Korea)

Author keywords

field effect transistor; graphene; MoS2; quantum tunneling; spin filter; vertical heterostructure

Indexed keywords

DEVICE PERFORMANCE; GRAPHENE ELECTRODES; GRAPHENE FIELD-EFFECT TRANSISTORS; MOS2; QUANTUM TUNNELING; SPIN DEPENDENT TUNNELING; SPIN FILTERS; VERTICAL HETEROSTRUCTURE;

ELECTRON TUNNELING; FIELD EFFECT TRANSISTORS; GRAPHENE; GRAPHITE ELECTRODES; MOLYBDENUM COMPOUNDS; THERMOELECTRIC EQUIPMENT;

HETEROJUNCTIONS;

EID: 84883244273     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn402919d     Document Type: Article

References (37)

1. Novoselov, K. S.; Geim, A. K.; Morozov, S. V.; Jiang, D.; Katsnelson, M. I.; Griorieva, I. V.; Dubonos, S. V.; Firsov, A. A. Two-Dimensional Gas of Massless Dirac Fermions in Graphene Nature 2005, 438, 197-200
2. Zhang, Y.; Tan, Y.-W.; Stormer, H. L.; Kim, P. Experimental Observation of the Quantum Hall Effect and Berry's Phase in Graphene Nature 2005, 438, 201-204
3. Ghosh, S.; Bao, W.; Nika, D. L.; Subrina, S.; Pokatilov, E. P.; Lau, C. N.; Baladin, A. A. Dimensional Crossover of Thermal Transport in Few-Layer Graphene Nat. Mater. 2010, 9, 555-558
4. Lee, C.; Wei, X. D.; Kysar, J. W.; Hone, J. Measurement of the Elastic Properties and Intrinsic Strength of Monolayer Graphene Science 2008, 321, 385-388
5. Wu, Y.; Lin, Y.; Bol, A. A.; Jenkins, K. A.; Xia, F.; Farmer, D. B.; Zhu, Y.; Avouris, P. High-Frequency, Scaled Graphene Transistors on Diamond-like Carbon Nature 2011, 472, 74-78
6. Liao, L.; Lin, Y. C.; Bao, M.; Rui, C.; Bai, J.; Liu, Y.; Qu, Y.; Wang, K. L.; Huang, Y.; Duan, X. High-Speed Graphene Transistors with a Self-Aligned Nanowire Gate Nature 2010, 467, 305-308
7. Han, S. J.; Jenkins, K. A.; Garcia, A. V.; Franklin, A. D.; Bol, A. A.; Haensch, W. High-Frequency Graphene Voltage Amplifier Nano Lett. 2011, 11, 3690-3693
8. Yang, H.; Heo, J.; Park, S.; Song, H. J.; Seo, D. H.; Byun, K. E.; Kim, P.; Yoo, I.; Chung, H. J.; Kin, K. Graphene Barrister, a Triode Device with a Gate-Controlled Schottky Barrier Science 2012, 336, 1140-1143
9. Sabio, J.; Seoanez, C.; Fraini, S.; Guinea, F.; Castro Neto, A. H.; Sols, F. Electrostatic Interactions between Graphene Layers and Their Environment Phys. Rev. B 2008, 77, 195409
10. Ahn, G.; Kim, H. R.; Ko, T. Y.; Choi, K.; Watanabe, K.; Taniguchi, T.; Hong, B. H.; Ruy, S. Optical Probing of the Electronic Interaction between Graphene and Hexagonal Boron Nitride ACS Nano 2013, 7, 1533-1541
11. Britnell, L.; Gorbachev, R. V.; Jalil, R.; Belle, B. D.; Schedin, F.; Mishchenko, A.; Georgiou, T.; Katsnelson, M. I.; Eaves, L.; Morovoz, S. V. et al. Field-Effect Tunneling Transistor Based on Vertical Graphene Heterostructures Science 2012, 335, 947-950
12. Mehr, W.; Dabrowski, J.; Christoph Scheytt, J.; Lippert, G.; Xie, Y. H.; Lemme, M. C.; Osting, M.; Lupina, G. Vertical Graphene Base Transistor IEEE Electron Device Lett. 2012, 33, 691-693
13. Fiori, G.; Bruzzone, S.; Iannaccone, G. Very Large Current Modulation in Vertical Heterostructure Graphene/hBN Transistor IEEE Trans. Electron Devices 2013, 60, 268-273
14. Bala Kumar, S.; Seol, G.; Guo, J. Modeling of a Vertical Tunneling Graphene Heterojunction Field-Effect Transistor Appl. Phys. Lett. 2012, 101, 033503
15. Butler, S. Z.; Hollen, S. M.; Cao, L.; Cui, Y.; Gupta, J. A.; Gutiérrez, H. R.; Heinz, T. F.; Hong, S. S.; Huang, J.; Ismach, A. F. et al. Progress, Challenges, and Opportunities in Two-Dimensional Materials beyond Graphene ACS Nano 2013, 7, 2898-2926
16. Dean, C. R.; Young, A. F.; Meric, I.; Lee, C.; Wang, L.; Sorgenfrei, S.; Watanabe, K.; Taniguchi, T.; Kim, P.; Shepard, K. L. et al. Boron Nitride Substrates for High-Quality Graphene Electronics Nat. Nanotechnol. 2010, 5, 722-726
17. Giovannetti, G.; Khomyakov, P. A.; Brocks, G.; Kelly, P. J.; Brink, J. V. Substrate-Induced Band Gap in Graphene on Hexagonal Boron Nitride: Ab Initio Density Functional Calculations Phys. Rev. B 2007, 76, 073103
18. Mayorov, A. S.; Gorbachev, R. V.; Morozov, S. V.; Britnell, L.; Jalil, R.; Ponomarenko, L. A.; Blake, P.; Novoselov, K. S.; Watanabe, K.; Taniguchi, T. et al. Micrometer-Scale Ballistic Transport in Encapsulated Graphene at Room Temperature Nano Lett. 2011, 11, 2396-2399
19. Kim, S. M.; Hsu, A.; Araujo, P. T.; Lee, Y. H.; Palacios, T.; Dresselhaus, M.; Idrobo, J. C.; Kim, K. K.; Kong, J. Synthesis of Patched or Stacked Graphene and hBN Flakes: A Route to Hybrid Structure Discovery Nano Lett. 2013, 13, 933-941
20. Zhao, J.; Yu, Y.; Bai, Y.; Lu, B.; Wang, B. Chemical Functionalization of BN Graphene with the Metal-Arene Group: A Theoretical Study J. Mater. Chem. 2012, 22, 9343-9350
21. 2 Nanoribbons: High Stability and Unusual Electronic and Magnetic Properties J. Am. Chem. Soc. 2008, 130, 16739-16744
22. 2 Nanoribbons and Their Defects Phys. Chem. C 2011, 115, 3934-3941
23. 2 Inorganic Nanoribbons Encapsulated in Quasi-1D Carbon Nanotubes J. Am. Chem. Soc. 2010, 132, 13840-13847
24. Botello-Méndez, A. R.; Lópes-Urías, F.; Terrones, M.; Terrones, H. Metallic and Ferromagnetic Edges in Molybdebum Disulfide Nanoribbons Nanotechnology 2009, 20, 325703
25. 2 Nanoribbon by Sulfur Vacancy Nanoscale 2010, 2, 1429-1435
26. 2: Existence of Ferromagnetism Appl. Phys. Lett. 2012, 101, 123105
27. 2 Monolayer Solid State Commun. 2012, 152, 909-913
28. 2: A New Direct Band-Gap Semiconductor Phys. Rev. Lett. 2010, 105, 136805
29. 2 Nano Lett. 2013, 13, 1416-1421
30. 2 Monolayers with Near-Unity Valley Polarization ACS Nano 2013, 7, 2768-2772
31. Zhu, Z. Y.; Cheng, Y. C.; Schwingenschlögl, U. Giant Spin-Orbit-Induced Spin Splitting in Two-Dimensional Transition-Metal Dichalcogenide Semiconductors Phys. Rev. B 2011, 84, 153402
32. Sui, Y.; Appenzeller, J. Screening and Interlayer Coupling in Multilayer Graphene Field-Effect Transistor Nano Lett 2009, 9, 2973-2977
33. 2 Monolayer: An Ab Initio Study Nanoscale 2011, 3, 3883-3887
34. Cao, T.; Wang, G.; Han, W.; Ye, H.; Zhu, C.; Shi, J.; Niu, Q.; Tan, P.; Wang, E.; Liu, B. et al. Valley-Selective Circular Dichroism of Monolayer Molybdenum Disulphide Nat. Commun. 2012, 3, 887
35. Pereira, J. M., Jr.; Peeters, F. M.; Costa Filho, R. N.; Farias, G. A. Valley Polarization Due to Trigonal Warping on Tunneling Electrons in Graphene J. Phys.: Condens. Matter 2009, 21, 045301
36. Garcia-Pomar, J. L.; Cortijo, A.; Nieto-Vesperinas, M. Fully Valley-Polarized Electron Beams in Graphene Phys. Rev. Lett. 2008, 100, 236801
37. Aharony, A.; Tokura, Y.; Cohen, G. Z.; Entin-Wohlman, O.; Katsumoto, S. Filtering and Analyzing Mobile Qubit Information via Rashba-Dressenhaus- Aharonov-Bohm Interferometers Phys. Rev. B 2011, 84, 035323