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Electrochemical and Solid-State Letters

Volumn 14, Issue 11, 2011, Pages

Al2O3/InGaZnO4 heterojunction band offsets by X-ray photoelectron spectroscopy

(8) Cho, Hyun a Douglas, E A b Scheurmann, A b Gila, B P b Craciun, V b Lambers, E S b Pearton, S J b Ren, F b

a Pusan University (South Korea)

b J Crayton Pruitt Family Department of Biomedical Engineering (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND OFFSETS; CONDUCTION BAND OFFSET; ELECTRICAL STABILITY; ENERGY DISCONTINUITY;

ALUMINUM; GATE DIELECTRICS; HETEROJUNCTIONS; PHOTONS; THIN FILM TRANSISTORS;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 80053517889 PISSN: 10990062 EISSN: None Source Type: Journal
DOI: 10.1149/2.001111esl Document Type: Article

Times cited : (30)

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