-
1
-
-
0042377613
-
-
APPLAB 0003-6951 10.1063/1.1595714
-
K. Kobayashi, M. Yabashi, Y. Takata, T. Tokushima, S. Shin, K. Tamasaku, D. Miwa, T. Ishikawa, H. Nohira, T. Hattori, Y. Sugita, O. Nakatsuka, A. Sakai, and S. Zaima, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1595714 83, 1005 (2003).
-
(2003)
Appl. Phys. Lett.
, vol.83
, pp. 1005
-
-
Kobayashi, K.1
Yabashi, M.2
Takata, Y.3
Tokushima, T.4
Shin, S.5
Tamasaku, K.6
Miwa, D.7
Ishikawa, T.8
Nohira, H.9
Hattori, T.10
Sugita, Y.11
Nakatsuka, O.12
Sakai, A.13
Zaima, S.14
-
2
-
-
33847737038
-
Chemical analysis of Hf O2 Si (100) film systems exposed to N H3 thermal processing
-
DOI 10.1063/1.2422746
-
P. S. Lysaght, J. Barnett, G. I. Bersuker, J. C. Woicik, D. A. Fischer, B. Foran, H.-H. Tseng, and R. Jammy, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.2422746 101, 024105 (2007). (Pubitemid 46372827)
-
(2007)
Journal of Applied Physics
, vol.101
, Issue.2
, pp. 024105
-
-
Lysaght, P.S.1
Barnett, J.2
Bersuker, G.I.3
Woicik, J.C.4
Fischer, D.A.5
Foran, B.6
Tseng, H.-H.7
Jammy, R.8
-
3
-
-
57049129311
-
-
JAPIAU 0021-8979 10.1063/1.3021461
-
K. Kakushima, K. Okamoto, K. Tachi, J. Song, S. Sato, T. Kawanago, K. Tsutsui, N. Sugii, P. Ahmet, T. Hattori, and H. Iwai, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.3021461 104, 104908 (2008).
-
(2008)
J. Appl. Phys.
, vol.104
, pp. 104908
-
-
Kakushima, K.1
Okamoto, K.2
Tachi, K.3
Song, J.4
Sato, S.5
Kawanago, T.6
Tsutsui, K.7
Sugii, N.8
Ahmet, P.9
Hattori, T.10
Iwai, H.11
-
4
-
-
72049092682
-
-
NJOPFM 1367-2630 10.1088/1367-2630/11/12/125007
-
R. Claessen, M. Sing, M. Paul, G. Berner, A. Wetscherek, A. Mller, and W. Drube, New J. Phys. NJOPFM 1367-2630 10.1088/1367-2630/11/12/125007 11, 125007 (2009).
-
(2009)
New J. Phys.
, vol.11
, pp. 125007
-
-
Claessen, R.1
Sing, M.2
Paul, M.3
Berner, G.4
Wetscherek, A.5
Mller, A.6
Drube, W.7
-
5
-
-
84871305900
-
-
APPLAB 0003-6951 10.1063/1.4770380
-
L. A. Walsh, G. Hughes, P. K. Hurley, J. Lin, and J. C. Woicik, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.4770380 101, 241602 (2012).
-
(2012)
Appl. Phys. Lett.
, vol.101
, pp. 241602
-
-
Walsh, L.A.1
Hughes, G.2
Hurley, P.K.3
Lin, J.4
Woicik, J.C.5
-
6
-
-
54949095165
-
-
JESOAN 0013-4651 10.1149/1.2988045
-
G. Brammertz, H. C. Lin, K. Martens, D. Mercier, C. Merckling, J. Penaud, C. Adelmann, S. Sioncke, W. E. Wang, M. Caymax, M. Meuris, and M. Heyns, J. Electrochem. Soc. JESOAN 0013-4651 10.1149/1.2988045 155, H945 (2008).
-
(2008)
J. Electrochem. Soc.
, vol.155
, pp. 945
-
-
Brammertz, G.1
Lin, H.C.2
Martens, K.3
Mercier, D.4
Merckling, C.5
Penaud, J.6
Adelmann, C.7
Sioncke, S.8
Wang, W.E.9
Caymax, M.10
Meuris, M.11
Heyns, M.12
-
8
-
-
0003241465
-
-
ASUSEE 0169-4332 10.1016/0169-4332(92)90227-O
-
D. Mao, A. Kahn, G. Le Lay, M. Marsi, Y. Hwu, and G. Margaritondo, Appl. Surf. Sci. ASUSEE 0169-4332 10.1016/0169-4332(92)90227-O 56-58, Part 1, 142 (1992).
-
(1992)
Appl. Surf. Sci.
, vol.5658
, pp. 142
-
-
Mao, D.1
Kahn, A.2
Le Lay, G.3
Marsi, M.4
Hwu, Y.5
Margaritondo, G.6
-
9
-
-
67349114865
-
-
MIENEF 0167-9317 10.1016/j.mee.2009.03.090
-
M. Caymax, G. Brammertz, A. Delabie, S. Sioncke, D. Lin, M. Scarrozza, G. Pourtois, W.-E. Wang, M. Meuris, and M. Heyns, Microelectron. Eng. MIENEF 0167-9317 10.1016/j.mee.2009.03.090 86, 1529 (2009).
-
(2009)
Microelectron. Eng.
, vol.86
, pp. 1529
-
-
Caymax, M.1
Brammertz, G.2
Delabie, A.3
Sioncke, S.4
Lin, D.5
Scarrozza, M.6
Pourtois, G.7
Wang, W.-E.8
Meuris, M.9
Heyns, M.10
-
10
-
-
7644231857
-
-
SUSCAS 0039-6028 10.1016/0039-6028(85)90953-7
-
I. Lindau, T. Kendelewicz, N. Newman, R. List, M. Williams, and W. Spicer, Surf. Sci. SUSCAS 0039-6028 10.1016/0039-6028(85)90953-7 162, 591 (1985).
-
(1985)
Surf. Sci.
, vol.162
, pp. 591
-
-
Lindau, I.1
Kendelewicz, T.2
Newman, N.3
List, R.4
Williams, M.5
Spicer, W.6
-
12
-
-
79551654686
-
-
JAPIAU 0021-8979 10.1063/1.3533959
-
E. O'Connor, B. Brennan, V. Djara, K. Cherkaoui, S. Monaghan, S. B. Newcomb, R. Contreras, M. Milojevic, G. Hughes, M. E. Pemble, R. M. Wallace, and P. K. Hurley, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.3533959 109, 024101 (2011).
-
(2011)
J. Appl. Phys.
, vol.109
, pp. 024101
-
-
O'Connor, E.1
Brennan, B.2
Djara, V.3
Cherkaoui, K.4
Monaghan, S.5
Newcomb, S.B.6
Contreras, R.7
Milojevic, M.8
Hughes, G.9
Pemble, M.E.10
Wallace, R.M.11
Hurley, P.K.12
-
17
-
-
79952090346
-
-
APPLAB 0003-6951 10.1063/1.3556619
-
L. Lin and J. Robertson, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.3556619 98, 082903 (2011).
-
(2011)
Appl. Phys. Lett.
, vol.98
, pp. 082903
-
-
Lin, L.1
Robertson, J.2
-
18
-
-
79958062237
-
-
MIENEF 0167-9317 10.1016/j.mee.2011.03.053
-
W. Wang, C. Hinkle, E. Vogel, K. Cho, and R. Wallace, Microelectron. Eng. MIENEF 0167-9317 10.1016/j.mee.2011.03.053 88, 1061 (2011).
-
(2011)
Microelectron. Eng.
, vol.88
, pp. 1061
-
-
Wang, W.1
Hinkle, C.2
Vogel, E.3
Cho, K.4
Wallace, R.5
-
19
-
-
33646198048
-
-
PRLTAO 0031-9007 10.1103/PhysRevLett.44.1620
-
E. A. Kraut, R. W. Grant, J. R. Waldrop, and S. P. Kowalczyk, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.44.1620 44, 1620 (1980).
-
(1980)
Phys. Rev. Lett.
, vol.44
, pp. 1620
-
-
Kraut, E.A.1
Grant, R.W.2
Waldrop, J.R.3
Kowalczyk, S.P.4
-
20
-
-
78650381829
-
-
APPLAB 0003-6951 10.1063/1.3524262
-
A. K. Rumaiz, J. C. Woicik, G. A. Carini, D. P. Siddons, E. Cockayne, E. Huey, P. S. Lysaght, D. A. Fischer, and V. Genova, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.3524262 97, 242108 (2010).
-
(2010)
Appl. Phys. Lett.
, vol.97
, pp. 242108
-
-
Rumaiz, A.K.1
Woicik, J.C.2
Carini, G.A.3
Siddons, D.P.4
Cockayne, E.5
Huey, E.6
Lysaght, P.S.7
Fischer, D.A.8
Genova, V.9
-
21
-
-
0001136901
-
-
PRLTAO 0031-9007 10.1103/PhysRevLett.64.1947
-
M. Alonso, R. Cimino, and K. Horn, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.64.1947 64, 1947 (1990).
-
(1990)
Phys. Rev. Lett.
, vol.64
, pp. 1947
-
-
Alonso, M.1
Cimino, R.2
Horn, K.3
-
22
-
-
0001660757
-
-
JVTBD9 0734-211X 10.1116/1.585747
-
A. Bauer, M. Prietsch, S. Molodtsov, C. Laubschat, and G. Kaindl, J. Vac. Sci. Technol. B JVTBD9 0734-211X 10.1116/1.585747 9, 2108 (1991).
-
(1991)
J. Vac. Sci. Technol. B
, vol.9
, pp. 2108
-
-
Bauer, A.1
Prietsch, M.2
Molodtsov, S.3
Laubschat, C.4
Kaindl, G.5
-
23
-
-
4243333497
-
-
PRBMDO 1098-0121 10.1103/PhysRevB.52.4674
-
D. Yan, F. H. Pollak, T. P. Chin, and J. M. Woodall, Phys. Rev. B PRBMDO 1098-0121 10.1103/PhysRevB.52.4674 52, 4674 (1995).
-
(1995)
Phys. Rev. B
, vol.52
, pp. 4674
-
-
Yan, D.1
Pollak, F.H.2
Chin, T.P.3
Woodall, J.M.4
-
24
-
-
0000550344
-
-
PRBMDO 1098-0121 10.1103/PhysRevB.38.7568
-
T. Kendelewicz, P. Soukiassian, M. H. Bakshi, Z. Hurych, I. Lindau, and W. E. Spicer, Phys. Rev. B PRBMDO 1098-0121 10.1103/PhysRevB.38.7568 38, 7568 (1988).
-
(1988)
Phys. Rev. B
, vol.38
, pp. 7568
-
-
Kendelewicz, T.1
Soukiassian, P.2
Bakshi, M.H.3
Hurych, Z.4
Lindau, I.5
Spicer, W.E.6
-
25
-
-
0019058555
-
Unified defect model and beyond
-
DOI 10.1116/1.570583
-
W. E. Spicer, I. Lindau, P. Skeath, and C. Y. Su, J. Vac. Sci. Technol. JVSTAL 0022-5355 10.1116/1.570583 17, 1019 (1980). (Pubitemid 11453833)
-
(1980)
Journal of vacuum science & technology
, vol.17
, Issue.5
, pp. 1019-1027
-
-
Spicer, W.E.1
Lindau, I.2
Skeath, P.3
Su, C.Y.4
-
26
-
-
70350725864
-
-
10.1149/1.3206612
-
P. K. Hurley, E. O'Connor, S. Monaghan, R. Long, A. O'Mahony, I. M. Povey, K. Cherkaoui, J. MacHale, A. Quinn, G. Brammertz, M. M. Heyns, S. Newcomb, V. V. Afanas'ev, A. Sonnet, R. Galatage, N. Jivani, E. Vogel, R. M. Wallace, and M. Pemble, ECS Transactions 10.1149/1.3206612 25, 113 (2009).
-
(2009)
ECS Transactions
, vol.25
, pp. 113
-
-
Hurley, P.K.1
O'Connor, E.2
Monaghan, S.3
Long, R.4
O'Mahony, A.5
Povey, I.M.6
Cherkaoui, K.7
Machale, J.8
Quinn, A.9
Brammertz, G.10
Heyns, M.M.11
Newcomb, S.12
Afanas'Ev, V.V.13
Sonnet, A.14
Galatage, R.15
Jivani, N.16
Vogel, E.17
Wallace, R.M.18
Pemble, M.19
-
27
-
-
0242391028
-
Deep-level effects in GaAs microelectronics: A review
-
DOI 10.1023/A:1025528416032
-
N. P. Khuchua, L. V. Khvedelidze, M. G. Tigishvili, N. B. Gorev, E. N. Privalov, and I. F. Kodzhespirova, Russian Microelectronics RUICE5 1063-7397 10.1023/A:1025528416032 32, 257 (2003). (Pubitemid 39028566)
-
(2003)
Russian Microelectronics
, vol.32
, Issue.5
, pp. 257-274
-
-
Khuchua, N.P.1
Khvedelidze, L.V.2
Tigishvili, M.G.3
Gorev, N.B.4
Privalov, E.N.5
Kodzhespirova, I.F.6
-
28
-
-
77951612123
-
-
APPLAB 0003-6951 10.1063/1.3399776
-
B. Shin, J. R. Weber, R. D. Long, P. K. Hurley, C. G. Van de Walle, and P. C. McIntyre, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.3399776 96, 152908 (2010).
-
(2010)
Appl. Phys. Lett.
, vol.96
, pp. 152908
-
-
Shin, B.1
Weber, J.R.2
Long, R.D.3
Hurley, P.K.4
Van De Walle, C.G.5
McIntyre, P.C.6
-
29
-
-
79953199803
-
-
JESOAN 0013-4651 10.1149/1.3545799
-
R. D. Long, B. Shin, S. Monaghan, K. Cherkaoui, J. Cagnon, S. Stemmer, P. C. McIntyre, and P. K. Hurley, J. Electrochem. Soc. JESOAN 0013-4651 10.1149/1.3545799 158, G103 (2011).
-
(2011)
J. Electrochem. Soc.
, vol.158
, pp. 103
-
-
Long, R.D.1
Shin, B.2
Monaghan, S.3
Cherkaoui, K.4
Cagnon, J.5
Stemmer, S.6
McIntyre, P.C.7
Hurley, P.K.8
|