SCOPUS 정보 검색 플랫폼

Nanoscale

Volumn 5, Issue 18, 2013, Pages 8550-8554

Synthesis of p-type GaN nanowires

(7) Kim, Sung Wook a Park, Youn Ho a Kim, Ilsoo a Park, Tae Eon a Kwon, Byoung Wook b Choi, Won Kook b Choi, Heon Jin a

a Yonsei University (South Korea)

b Korea Institute of Science and Technology (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRICAL CHARACTERIZATION; GAN THIN FILMS; HOLE INJECTION LAYERS; ITS EFFICIENCIES; P-TYPE CHARACTERISTICS; P-TYPE DOPANT; STRUCTURAL DEFECT; VAPOR-LIQUID-SOLID MECHANISM;

ANNEALING; FIELD EFFECT TRANSISTORS; NANOWIRES; ORGANIC LIGHT EMITTING DIODES (OLED); SEMICONDUCTOR JUNCTIONS; VAPORS;

GALLIUM NITRIDE;

EID: 84883147623 PISSN: 20403364 EISSN: 20403372 Source Type: Journal
DOI: 10.1039/c3nr01664a Document Type: Article

Times cited : (14)

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