Improved optical and electrical properties of low-temperature sputtered GaN by hydrogenation

Journal of Applied Physics

Volumn 99, Issue 3, 2006, Pages

  Knox Davies, E C ^a   Henley, S J ^a   Shannon, J M ^a   Silva, S R P ^a  

^a UNIVERSITY OF SURREY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CONTAMINATION; DEPOSITION; ENERGY GAP; HYDROGENATION; OPTICAL PROPERTIES; OXYGEN; PHOTOLUMINESCENCE; REFRACTIVE INDEX; SPUTTERING;

DEPOSITION GASES; DIFFERENTIAL RESISTIVITY; GAN FILMS; OXYGEN CONTAMINATIONS;

GALLIUM NITRIDE;

EID: 33645549097     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2171780     Document Type: Article

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