Recovery of dry-etch-induced surface damage on Mg-doped GaN by NH 3 ambient thermal annealing

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 22, Issue 2, 2004, Pages 489-491

  Moon, Yong Tae ^a,b   Kim, Dong Joon ^a,c   Park, Jin Sub ^a,c   Oh, Jeong Tak ^a,c   Lee, Ji Myon ^a,d   Park, Seong Ju ^a  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

^b VIRGINIA COMMONWEALTH UNIVERSITY   (United States)

^c Samsung Electro Mechanics   (South Korea)

^d Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ETCH-INDUCED DAMAGE; NITROGEN-DEFECIENT SURFACE REGIONS; SHEET HOLE CONCENTRATION; SURFACE DAMAGES;

ATOMIC FORCE MICROSCOPY; DOPING (ADDITIVES); HALL EFFECT; INTERFEROMETERS; LASER APPLICATIONS; MAGNESIUM PRINTING PLATES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OHMIC CONTACTS; PLASMA ETCHING; RAPID THERMAL ANNEALING; REDUCTION; SAPPHIRE; SEMICONDUCTING FILMS; SURFACE ROUGHNESS; THERMAL EFFECTS;

GALLIUM NITRIDE;

EID: 2342618827     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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