Vertical growth of GaN nanowires using Cu based multi-catalyst

International Journal of Nanotechnology

Volumn 10, Issue 8-9, 2013, Pages 828-835

  Ha, Ryong ^a   Park, Eunmi ^a   Park, Tae Eon ^a   Kim, Sung Wook ^a   Choi, Heon Jin ^a  

^a Yonsei University   (South Korea)

Author keywords

Activation energy; GaN nanowires; Vertical growth; VLS mechanism

Indexed keywords

ACTIVATION ENERGY; COPPER; GALLIUM NITRIDE; GOLD ALLOYS; III-V SEMICONDUCTORS; NANOWIRES; SEMICONDUCTING GALLIUM COMPOUNDS; SINGLE CRYSTALS; TERNARY ALLOYS; WIDE BAND GAP SEMICONDUCTORS;

GAN NANOWIRES; GROWTH DIRECTIONS; GROWTH OF GAN; INTERFACIAL LAYER; LOW-ACTIVATION ENERGY; RANDOM GROWTH; VERTICAL GROWTH; VLS MECHANISM;

NANOCATALYSTS;

EID: 84878864119     PISSN: 14757435     EISSN: None     Source Type: Journal    
DOI: 10.1504/IJNT.2013.054222     Document Type: Article

References (8)

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