Structure and electrical properties of [0001] GaN nanowires

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7518, Issue , 2009, Pages

  Xiong, Zhihua ^a   Chen, Lanli ^a   Li, Dongmei ^a   Wan, Qixin ^a  

^a JIANGXI SCIENCE AND TECHNOLOGY NORMAL UNIVERSITY   (China)

Author keywords

Atomic structure; Electronic structure; First principles; GaN nanowires

Indexed keywords

ATOMIC STRUCTURE; BAND EDGE; BAND GAPS; CONDUCTION-BAND MINIMUM; EDGE STATE; ELECTRICAL PROPERTY; FIRST-PRINCIPLES; GAN NANOWIRES; GENERALIZED GRADIENT APPROXIMATIONS; NON-POLAR; VALENCE-BAND MAXIMUMS; WURTZITE GAN NANOWIRES; WURTZITES;

ATOMS; BIOINFORMATICS; BOND LENGTH; DENSITY FUNCTIONAL THEORY; ELECTRIC PROPERTIES; ELECTRON MOBILITY; ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; GALLIUM ALLOYS; GALLIUM NITRIDE; LIGHTING; NANOWIRES; SEMICONDUCTING GALLIUM; SOLAR CELLS; ZINC SULFIDE;

ELECTRIC WIRE;

EID: 71449104502     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.842319     Document Type: Conference Paper

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