Activation mechanism of annealed Mg-doped GaN in air

Applied Physics Letters

Volumn 84, Issue 15, 2004, Pages 2760-2762

  Lin, Yow Jon ^a  

^a FENG CHIA UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ANALYSIS; ANNEALING; DOPING (ADDITIVES); HALL EFFECT; HYDROGENATION; LUMINESCENCE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR MATERIALS; STERILIZATION (CLEANING); THERMAL EFFECTS;

AIR ACTIVATION; HALL MEASUREMENTS; HOLE CONCENTRATION; LOW-ENERGY ELECTRON-BEAM IRRADIATION (LEEBI);

GALLIUM COMPOUNDS;

EID: 2342570977     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1704873     Document Type: Article

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