Investigation of thermal stability of high-k interpoly dielectrics in TaN metal floating gate memory structures

2011 3rd IEEE International Memory Workshop, IMW 2011

Volumn , Issue , 2011, Pages

  Jayanti, Srikant ^a   Yang, Xiangyu ^a   Misra, Veena ^a  

^a North Carolina State University   (United States)

Author keywords

crystallization; high k; interpoly dielectric; metal floating gate memory; thermal stability

Indexed keywords

FLOATING GATE MEMORIES; FLOATING GATES; HIGH TEMPERATURE; HIGH-K; HIGH-K DIELECTRIC; HIGHER-DEGREE; INTERPOLY DIELECTRIC; INTERPOLY DIELECTRICS; MEMORY STRUCTURE; METAL INSULATOR METALS; NAND FLASH; NAND FLASH MEMORY; POSSIBLE SOLUTIONS; POTENTIAL APPLICATIONS; SI SUBSTRATES;

CRYSTALLIZATION; DIELECTRIC MATERIALS; FLASH MEMORY; GATE DIELECTRICS; HAFNIUM; METAL INSULATOR BOUNDARIES; METALS; TANTALUM COMPOUNDS; THERMODYNAMIC STABILITY;

MIM DEVICES;

EID: 79960015313     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IMW.2011.5873183     Document Type: Article

References (4)

1. S. Raghunathan, T. Krishnamohan, K. Parat, and K. Saraswat, "Investigation of ballistic current in scaled floating-gate NAND FLASH and a solution," IEDM Tech. Dig., pg. 819, 2009.
2. S. Jayanti, X. Yang, R. Suri, and V. Misra, "Ultimate scalability of TaN metal floating gate with incorporation of high-k blocking dielectrics for flash memory applications," IEDM Tech. Dig., pg. 106, 2010
3. P. Blomme et al., "Novel dual layer floating gate structure as enabler of fully planar flash memory," Sym. On VLSI Tech. Dig. of Tech. Papers, 2010, pg. 129.
4. 3interface scavenging layer for floating gate memory structures," Appl. Phys. Lett., vol. 96, 092905, 2010.