Work function tuning and improved gate dielectric reliability with multilayer graphene as a gate electrode for metal oxide semiconductor field effect device applications

Applied Physics Letters

Volumn 100, Issue 23, 2012, Pages

  Misra, Abhishek ^a   Waikar, Mayur ^a   Gour, Amit ^a   Kalita, Hemen ^a   Khare, Manali ^a   Aslam, Mohammed ^a   Kottantharayil, Anil ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY BOMBAY   (India)

Author keywords

[No Author keywords available]

Indexed keywords

BREAKDOWN CHARACTERISTICS; DIELECTRIC RELIABILITY; EFFECTIVE WORK FUNCTION; GATE DIELECTRIC RELIABILITY; GATE ELECTRODES; GRAPHENE LAYERS; INTERFACE STATE DENSITY; METAL GATE ELECTRODES; METAL OXIDE SEMICONDUCTOR; METAL OXIDE SEMICONDUCTOR STRUCTURE; METALLIC CONTAMINATION; NUMBER OF LAYERS; TIN GATES; WORK FUNCTION TUNING;

DIELECTRIC MATERIALS; GATE DIELECTRICS; MOS DEVICES; TITANIUM NITRIDE; TRANSISTORS;

GRAPHENE;

EID: 84862137638     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4726284     Document Type: Article

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