Influence of n-type versus p-type AlGaN electron-blocking layer on InGaN/GaN multiple quantum wells light-emitting diodes

Applied Physics Letters

Volumn 103, Issue 5, 2013, Pages

  Ji, Yun ^a   Zhang, Zi Hui ^a   Kyaw, Zabu ^a   Tiam Tan, Swee ^a   Gang Ju, Zhen ^a   Liang Zhang, Xue ^a   Liu, Wei ^a   Wei Sun, Xiao ^a,b   Volkan Demir, Hilmi ^a,c  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b SOUTHERN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

^c BILKENT UNIVERSITY   (Turkey)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE REGIONS; CARRIER DISTRIBUTIONS; ELECTRON OVERFLOW; ENERGY-BAND DIAGRAM; EXTERNAL QUANTUM EFFICIENCY; HOLE INJECTION; OPTICAL OUTPUT POWER; RADIATIVE RECOMBINATION RATE;

LIGHT EMITTING DIODES;

SEMICONDUCTOR QUANTUM WELLS;

EID: 84882397965     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4817381     Document Type: Article

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