Enhanced hole transport in InGaN/GaN multiple quantum well light-emitting diodes with a p-type doped quantum barrier

Optics Letters

Volumn 38, Issue 2, 2013, Pages 202-204

  Ji, Yun ^a   Zhang, Zi Hui ^a   Tan, Swee Tiam ^a   Ju, Zhen Gang ^a   Kyaw, Zabu ^a   Hasanov, Namig ^a   Liu, Wei ^a   Sun, Xiao Wei ^a,b   Demir, Hilmi Volkan ^a,c,d  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b TIANJIN UNIVERSITY   (China)

^c NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^d BILKENT UNIVERSITY   (Turkey)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE REGIONS; DUAL WAVELENGTH; FORWARD VOLTAGE; HIGH CURRENTS; HOLE DISTRIBUTION; HOLE TRANSPORTS; INGAN/GAN; INJECTION LEVELS; LIGHT GENERATION; MG-DOPING; P-TYPE; QUANTUM BARRIERS; RADIATIVE RECOMBINATION;

BAND STRUCTURE; GALLIUM NITRIDE; HOLE MOBILITY; NUMERICAL ANALYSIS; SEMICONDUCTOR QUANTUM WELLS;

LIGHT EMITTING DIODES;

EID: 84872547434     PISSN: 01469592     EISSN: 15394794     Source Type: Journal    
DOI: 10.1364/OL.38.000202     Document Type: Article

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