InGaN-based light-emitting diodes with an AlGaN staircase electron blocking layer

IEEE Photonics Technology Letters

Volumn 24, Issue 19, 2012, Pages 1737-1740

  Chang, Shoou Jinn ^a,b   Yu, Sheng Fu ^b   Lin, Ray Ming ^c   Li, Shuguang ^a   Chiang, Tsung Hsun ^b   Chang, Sheng Po ^b   Chen, Chang Ho ^d  

^a CHINA UNIVERSITY OF PETROLEUM   (China)

^b NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^c CHANG GUNG UNIVERSITY   (Taiwan)

^d MOME   (Taiwan)

Author keywords

Droop; InGaN; Light emitting diodes (LEDs); Staircase electron blocking layer (EBL)

Indexed keywords

ALGAN; BUILT-IN ELECTRIC FIELDS; DROOP; DROOP CHARACTERISTICS; ELECTRON BLOCKING LAYER; EXTERNAL QUANTUM EFFICIENCY; HIGH CURRENTS; HOLE INJECTION; INGAN; LOW CURRENTS;

DIODES; EFFICIENCY; GALLIUM COMPOUNDS; STAIRS;

LIGHT EMITTING DIODES;

EID: 84866414470     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2012.2213589     Document Type: Article

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