Structural, electronic properties and stability of Ag-doped GaAs nanowires: First-principles study

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 54, Issue , 2013, Pages 301-307

  Wan, L ^a   Gao, T ^a  

^a SICHUAN UNIVERSITY   (China)

Author keywords

Ag doped; First principles calculation; GaAs nanowire; Stability; Structural and electronic properties

Indexed keywords

ACCEPTOR LEVELS; AG-DOPED; FIRST-PRINCIPLES CALCULATION; FIRST-PRINCIPLES STUDY; GAAS NANOWIRES; P-TYPE BEHAVIORS; STRUCTURAL , ELECTRONIC PROPERTIES; STRUCTURAL AND ELECTRONIC PROPERTIES;

CALCULATIONS; CONVERGENCE OF NUMERICAL METHODS; ELECTRONIC PROPERTIES; GALLIUM ARSENIDE; NANOWIRES; SEMICONDUCTING GALLIUM;

SILVER;

EID: 84882364683     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2013.07.007     Document Type: Article

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