Synthesis of vertically-aligned GaAs nanowires on GaAs/(111)Si hetero-substrates by metalorganic vapour phase epitaxy

Crystal Research and Technology

Volumn 46, Issue 8, 2011, Pages 795-800

  Miccoli, I ^a   Prete, P ^b   Marzo, F ^a   Cannoletta, D ^a   Lovergine, N ^a  

^a UNIVERSITY OF SALENTO   (Italy)

^b CNR   (Italy)

Author keywords

GaAs nanowires; III V Si hetero epitaxy; MOVPE; vapour liquid solid growth

Indexed keywords

CROSS-SECTIONAL SHAPE; GAAS; GAAS NANOWIRES; HIGHER YIELD; METAL-ORGANIC VAPOUR PHASE EPITAXY; SI SUBSTRATES; VAPOUR-LIQUID-SOLID GROWTHS;

CRYSTAL GROWTH; EPILAYERS; GALLIUM ARSENIDE; NANOWIRES; SEMICONDUCTING GALLIUM; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SUBSTRATES; VAPOR PHASE EPITAXY;

GALLIUM ALLOYS;

EID: 79960072331     PISSN: 02321300     EISSN: 15214079     Source Type: Journal    
DOI: 10.1002/crat.201000711     Document Type: Conference Paper

References (22)

1. M. T. Borgström, V. Zwiller, E. Müller, and, A. Imamoglu, Nano Lett. 5, 1439 (2005).
2. H. Pettersson, J. TrägÃrdh, A. I. Persson, L. Landin, D. Hessman, and, L. Samuelson, Nano Lett. 6, 229 (2006).
3. H. Goto, K. Nosaki, K. Tomioka, S. Hara, K. Hiruma, J. Motohisa, and, T. Fukui, Appl. Phys. Expr. 2, 035004 (2009).
4. C. Colombo, M. Hei, M. Grätzel, and, A. Fontcuberta i Morral, Appl. Phys. Lett. 94, 173108 (2009).
5. L. Hu, and, G. Chen, Nano Lett. 7, 3249 (2007).
6. L. Tsakalakos, J. Balch, J. Fronheiser, M.Y. Shih, S. F. LeBoeuf, M. Pietrzykowski, P. J. Codella, B. A. Korevaar, O. Sulima, J. Rand, A. D. Kumar, and, U. Rapol, J. Nanophoton. 1, 01355 (2007).
7. B. M. Kayes, H. A. Atwater, and, N. S. Lewis, J. Appl. Phys. 97, 114302 (2005).
8. Y. Zhang, L.W. Wang, and, A. Mascarenhas, Nano Lett. 7, 1264 (2007).
9. T. MÃrtensson, C. P. T. Svensson, B. A. Wacaser, M. W. Larsson, W. Seifert, K. Deppert, A. Gustafsson, L. R. Wallenberg, and, L. Samuelson, Nano Lett. 4, 1987 (2004).
10. X. Y. Bao, C. Soci, D. Susac, J. Bratvold, D. P. R. Aplin, W. Wei, C. Y. Chen, S. A. Dayeh, K. L. Kavanagh, and, D. Wang, Nano Lett. 8, 3755 (2008).
11. V. Khorenko, I. Regolin, S. Neumann, Do, Q.T. Prost, W. Prost, and, F.-J. Tegude, in: Procs. of the 2005 Intern. Conf. on Indium Phosphide and Related Materials, Glasgow, Scotland, (UK), May 2005, pp. 363-366.
12. R. S. Wagner, and, W. C. Ellis, Appl. Phys. Lett. 4, 89 (1964).
13. H. Döschern, S. Brückner, and, T. Hannappel, J. Cryst. Growth (2010), in press.
14. E. Piscopiello, L. Tapfer, M. Vittori Antisari, P. Paiano, P. Prete, and, N. Lovergine, Phys. Rev. B 78, 035305 (2008).
15. P. Prete, and, N. Lovergine, MOVPE self-assembly and physical properties of free-standing III-V nanowires, in: Nanowires, Ed. P. Prete (Intech, 2010).
16. S. Roddaro, P. Caroff, G. Biasiol, F. Rossi, C. Bocchi, K. Nilsson, L. Froberg, J. B. Wagner, L. Samuelson, L. E. Wernersson, and, L. Sorba, Nanotechnology 20, 285303 (2009).
17. J. H. Kang, Q. Gao, H. J. Joyce, H. H. Tan, C. Jagadish, Y. Kim, D. Y. Choi, Y. Guo, H. Xu, J. Zou, M. A. Fickenscher, L. M. Smith, H. E. Jackson, and, J. M. Yarrison-Rice, Nanotechnology 21, 035604 (2010).
18. Y. B. Bolkhovityanov, and, O. P. Pchelyakov, Physics Uspekhi 51, 437 (2008).
19. P. Paiano, P. Prete, N. Lovergine, and, A. M. Mancini, J. Appl. Phys. 100, 094505 (2006).
20. M. Kawabe, T. Ueda, and, H. Takasugi, Jpn. J. Appl. Phys. 26, L114 (1987).
21. J. R. Patel, P. E. Freeland, M. S. Hybertsen, D. C. Jacobsen, and, J. A. Golovchenko, Phys. Rev. Lett. 59, 2180 (1987).
22. I. Miccoli, P. Prete, L. Tapfer, and, N. Lovergine, J. Appl. Phys., submitted (2011).