Role of cross section on the stability and electronic structure of Ag-doped ZnO nanowires

Journal of Nanoparticle Research

Volumn 14, Issue 3, 2012, Pages

  Li, Yanlu ^a   Zhao, Xian ^a   Fan, Weiliu ^a   Sun, Honggang ^a   Cheng, Xiufeng ^a  

^a SHANDONG UNIVERSITY   (China)

Author keywords

Ag doping; Cross section; Density functional theory; Electronic structure; Stability; ZnO nanowires

Indexed keywords

CONVERGENCE OF NUMERICAL METHODS; DENSITY FUNCTIONAL THEORY; ELECTRONIC STRUCTURE; II-VI SEMICONDUCTORS; MORPHOLOGY; NANOWIRES; OXIDE MINERALS; SEMICONDUCTOR DOPING; SYNTHESIS (CHEMICAL); WIDE BAND GAP SEMICONDUCTORS; ZINC OXIDE; ZNO NANOPARTICLES;

AG DOPING; CROSS SECTION; HOLE EFFECTIVE MASS; P-TYPE CHARACTERISTICS; P-TYPE CONDUCTION; QUANTUM SIZE EFFECTS; SEMICONDUCTOR NANOWIRE; ZNO NANOWIRES;

SEMICONDUCTING ZINC COMPOUNDS;

NANOWIRE; SILVER; SILVER DOPED ZINC OXIDE NANOWIRE; UNCLASSIFIED DRUG; ZINC OXIDE;

ARTICLE; CHEMICAL STRUCTURE; CONCENTRATION RESPONSE; CONTROLLED STUDY; ELECTRIC CONDUCTIVITY; MOLECULAR MODEL; MOLECULAR STABILITY; PRIORITY JOURNAL; SEMICONDUCTOR; SURFACE PROPERTY;

EID: 84862828634     PISSN: 13880764     EISSN: 1572896X     Source Type: Journal    
DOI: 10.1007/s11051-012-0739-2     Document Type: Article

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