Surface effects on the atomic and electronic structure of unpassivated GaAs nanowires

ACS Nano

Volumn 4, Issue 10, 2010, Pages 6021-6031

  Rosini, Marcello ^a   Magri, Rita ^a  

^a UNIVERSITY OF MODENA AND REGGIO EMILIA   (Italy)

Author keywords

electronic properties; GaAs; nanowires; surface properties

Indexed keywords

AB INITIO CALCULATIONS; BAND GAPS; BULK VALUE; DIRECT TRANSITION; DOPANT INCORPORATION; FLAT SURFACES; FORMATION ENERGIES; GAAS; GAAS NANOWIRES; GROWTH CONDITIONS; INDIRECT BAND GAP; POLYTYPISM; QUANTUM CONFINEMENT EFFECTS; SIDE WALLS; SMALL-DIAMETER; STRUCTURAL MOTIFS; SURFACE EFFECT; SURFACE STATE; WIDE DIAMETER; WURTZITES; ZINC BLENDE;

DOPING (ADDITIVES); ELECTRON MOBILITY; ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; ENERGY GAP; GALLIUM ALLOYS; GALLIUM ARSENIDE; HETEROJUNCTIONS; NANOWIRES; SEMICONDUCTING GALLIUM; SEMICONDUCTOR GROWTH; STRUCTURAL PROPERTIES; SURFACE DEFECTS; SURFACE PROPERTIES; ZINC; ZINC SULFIDE;

SURFACE STRUCTURE;

EID: 78049348540     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn1015488     Document Type: Article

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