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Volumn 115, Issue 30, 2011, Pages 14449-14454

First-principles study of the doping of InAs nanowires: Role of surface dangling bonds

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY REGIONS; FIRST-PRINCIPLES CALCULATION; FIRST-PRINCIPLES STUDY; FORMATION ENERGIES; HIGH STABILITY; INAS; P-TYPE DOPANT; P-TYPE DOPING; POSITIVELY CHARGED; QUANTUM CONFINEMENT EFFECTS; SURFACE DANGLING BONDS; SURFACE PASSIVATION; TRAP CENTER; ULTRATHIN NANOWIRES;

EID: 79961050780     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp112002n     Document Type: Article
Times cited : (32)

References (39)
  • 5
    • 77955339887 scopus 로고    scopus 로고
    • Nanometer-scale thermoelectric materials
    • Heremans, J. Nanometer-scale thermoelectric materials Springer Handb. Nanotechnol. 2007, 345, 345
    • (2007) Springer Handb. Nanotechnol. , vol.345 , pp. 345
    • Heremans, J.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.