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Volumn 315, Issue 1, 2011, Pages 143-147

Axial pn-junctions formed by MOVPE using DEZn and TESn in vaporliquidsolid grown GaAs nanowires

(8) Regolin, I a Gutsche, C a Lysov, A a Blekker, K a Li, Zi An a Spasova, M a Prost, W a Tegude, F J a

a UNIVERSITY OF DUISBURG ESSEN (Germany)

Author keywords

A1. High resolution electron transmission microscopy; A1. Nanostructures; A3. Metalorganic vapor phase epitaxy; B1. Arsenates; B1. Gallium compounds; B2. Semiconducting IIIV materials

Indexed keywords

A1. NANOSTRUCTURES; B1. ARSENATES; B1. GALLIUM COMPOUNDS; ELECTRON TRANSMISSION MICROSCOPY; METAL-ORGANIC VAPOR PHASE EPITAXY; SEMI CONDUCTING III-V MATERIALS;

DOPING (ADDITIVES); EPITAXIAL GROWTH; GALLIUM ARSENIDE; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; NANOWIRES; SEMICONDUCTING GALLIUM; SEMICONDUCTOR GROWTH; TIN; VAPORS;

GALLIUM ALLOYS;

EID: 79251577832 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2010.08.028 Document Type: Article

Times cited : (35)

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