Mechanism of positive bias stress-assisted recovery in amorphous-indium- gallium-zinc-oxide thin-film transistors from negative bias under illumination stress

Applied Physics Letters

Volumn 103, Issue 3, 2013, Pages

  Um, Jae Gwang ^a   Mativenga, Mallory ^a   Jang, Jin ^a  

^a Kyung Hee University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE VOLTAGE CHARACTERISTIC; CURRENT VOLTAGE; ELECTRON CAPTURE; NEUTRAL OXYGEN VACANCY; POSITIVE CHARGES; RECOVERY PROCESS; SHALLOW DONORS; THIN-FILM TRANSISTOR (TFTS);

GALLIUM; INDIUM; IONIZATION; OXYGEN VACANCIES; POLYPEPTIDES; THIN FILM TRANSISTORS; ZINC;

RECOVERY;

EID: 84881498042     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4813747     Document Type: Article

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