Extraction of virtual-source injection velocity in sub-100 nm III-V HFETs

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2009, Pages

  Kim, D H ^a,b   Del Alamo, J A ^a   Antoniadis, D A ^a   Brar, B ^b  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

^b TELEDYNE SCIENTIFIC COMPANY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER VELOCITY; ELECTRON VELOCITY; INJECTION VELOCITY; IV CHARACTERISTICS; LOGIC APPLICATIONS; MODEL YIELDS; ROOM TEMPERATURE; SATURATION REGIME; SEMIEMPIRICAL MODELS; SI DEVICES; SUB-100 NM; SUBTHRESHOLD;

ELECTRON DEVICES; VELOCITY;

ELECTRONS;

EID: 77952373998     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2009.5424268     Document Type: Conference Paper

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10. A. Khakifirooz et al., TED, p. 1401 (2008).