Uniform and position-controlled InAs nanowires on 2″ Si substrates for transistor applications

Nanotechnology

Volumn 23, Issue 1, 2012, Pages

  Ghalamestani, Sepideh Gorji ^a   Johansson, Sofia ^a   Borg, B Mattias ^a   Lind, Erik ^a   Dick, Kimberly A ^a   Wernersson, Lars Erik ^a  

^a LUND UNIVERSITY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

DEVICE APPLICATION; DEVICE CHARACTERISTICS; DIAMETER CONTROL; FULL CONTROL; GROWTH YIELD; HIGH QUALITY; HIGH UNIFORMITY; INAS; PRECISE POSITION; RF CHARACTERIZATION; SI SUBSTRATES; SOURCE CONTACT; THIN EPITAXIAL LAYER; TRANSISTOR CHANNELS; VERTICALLY ALIGNED; WAFER SIZES; WELL-ALIGNED NANOWIRES; WURTZITE STRUCTURE;

EPITAXIAL GROWTH; EPITAXIAL LAYERS; FIELD EFFECT TRANSISTORS; INDIUM ARSENIDE; NANOWIRES; POSITION CONTROL; SILICON; SILICON WAFERS; TRANSISTORS; ZINC SULFIDE;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 83455211764     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/23/1/015302     Document Type: Article

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