Nitrogen and vacancy clusters in ZnO

Journal of Materials Research

Volumn 28, Issue 15, 2013, Pages 1977-1983

  Tuomisto, Filip ^a   Rauch, Christian ^a   Wagner, Markus R ^b,c   Hoffmann, Axel ^c   Eisermann, Sebastian ^d   Meyer, Bruno K ^d   Kilanski, Lukasz ^e   Tarun, Marianne C ^f   McCluskey, Matthew D ^f  

^a AALTO UNIVERSITY   (Finland)

^b CATALAN INSTITUTE OF NANOSCIENCE AND NANOTECHNOLOGY ICN2   (Spain)

^c TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

^d JUSTUS LIEBIG UNIVERSITY   (Germany)

^e INSTITUTE OF PHYSICS   (Poland)

^f WASHINGTON STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BULK CRYSTALS; GROWTH OF THIN FILMS; INTRINSIC DEFECTS; N-DOPED ZNO; STABLE VACANCY; VACANCY CLUSTER; ZN VACANCIES; ZNO CRYSTALS;

CRYSTAL IMPURITIES; DEFECTS; DOPING (ADDITIVES); POSITRON ANNIHILATION SPECTROSCOPY;

ZINC OXIDE;

EID: 84881468741     PISSN: 08842914     EISSN: 20445326     Source Type: Journal    
DOI: 10.1557/jmr.2013.195     Document Type: Article

References (40)

1. B.K. Meyer, H. Alves, D.M. Hofmann, W. Kriegseis, D. Forster, F. Bertram, J. Christen, A. Hoffmann, M. Straßburg, M. Dworzak, U. Haboeck, and A.V. Rodina: Bound exciton and donor-acceptor pair recombinations in ZnO. Phys. Status Solidi B 241, 231 (2004).
2. U. Ozgur, Y.I. Alivov, C. Liu, A. Teke, M.A. Reshchikov, S. Dogan, V. Avrutin, S.J. Cho, and H. Morkoc: A comprehensive review of ZnO materials and devices. J. Appl. Phys. 98, 041301 (2005).
3. C.F. Klingshirn, B.K. Meyer, A. Waag, A. Hoffmann, and J. Geurts: Zinc Oxide. Springer Ser. Mater. Sci. 120, (2010).
4. T.M. Børseth, F. Tuomisto, J.S. Christensen, E.V. Monakhov, B.G. Svensson, and A.Y. Kuznetsov: Vacancy clustering and acceptor activation in nitrogen-implanted ZnO. Phys. Rev. B. 77, 045204 (2008).
5. G. Perillat-Merceroz, F. Donatini, R. Thierry, P-H. Jouneau, P. Ferret, and G. Feuillet: Structural recovery of ion implanted ZnO nanowires. J. Appl. Phys. 111, 083524 (2012).
6. 1 ion implantation through dynamic annealing process. Appl. Phys. Lett. 101, 112101 (2012).
7. S. Lautenschlaeger, S. Eisermann, B.K. Meyer, G. Callison, M.R. Wagner, and A. Hoffmann: Nitrogen incorporation in homoepitaxial ZnO CVD epilayers. Phys. Status Solidi RRL 3, 16 (2009).
8. S. Lautenschlaeger, S. Eisermann, G. Haas, E.A. Zolnowski, M.N. Hofmann, A. Laufer, M. Pinnisch, B.K. Meyer, M.R. Wagner, J.S. Reparaz, G. Callsen, A. Hoffmann, A. Chernikov, S. Chatterjee, V. Bornwasser, and M. Koch: Optical signatures of nitrogen acceptors in ZnO. Phys. Rev. B 85, 235204 (2012).
9. M.C. Tarun, M. Zafar Iqbal, and M.D. McCluskey: Nitrogen is a deep acceptor in ZnO. AIP Adv. 1, 022105 (2011).
10. W. Puff, S. Brunner, P. Mascher, and A.G. Balogh: Studies of defects in electron and proton irradiated ZnO by positron annihilation. Mater. Sci. Forum 196-201, 333 (1995).
11. F. Tuomisto, V. Ranki, K. Saarinen, and D.C. Look: Evidence of the Zn vacancy acting as the dominant acceptor in n-type ZnO. Phys. Rev. Lett. 91, 205502 (2003).
12. Z.Q. Chen, S.J. Wang, M. Maekawa, A. Kawasuso, H. Naramoto, X.L. Yuan, and T. Sekiguchi: Thermal evolution of defects in as-grown and electron-irradiated ZnO studied by positron annihilation. Phys. Rev. B 75, 245206 (2007).
13. S. Lautenschlaeger, J. Sann, N. Volbers, B.K. Meyer, A. Hoffmann, U. Haboeck, and M.R. Wagner: Asymmetry in the excitonic recombinations and impurity incorporation of the two polar faces of homoepitaxially grown ZnO films. Phys. Rev. B 77, 144108 (2008).
14. M.R. Wagner, T.P. Bartel, R. Kirste, A. Hoffmann, J. Sann, S. Lautenschläger, B.K. Meyer, and C. Kisielowski: Influence of substrate surface polarity on homoepitaxial growth of ZnO layers by chemical vapor deposition. Phys. Rev. B 79, 035307 (2009).
15. S.J. Jokela and M.D. McCluskey: Hydrogen complexes in ZnO grown by chemical vapor transport. Physica B 401-402, 395 (2007).
16. Cermet, Inc: http://www.cermetinc.com.
17. K. Saarinen, P. Hautojärvi, and C. Corbel: Positron annihilation spectroscopy of defects in semiconductors, in Identification of Defects in Semiconductors (Semiconductors and Semimetals), Vol. 51A, edited by M. Stavola (Academic Press, New York, 1998), p. 209.
18. F. Tuomisto and I. Makkonen: Defect identification in semiconductors: Experiment and theory of positron annihilation. Rev. Mod. Phys, to be published.
19. M.J. Puska and R.M. Nieminen: Theory of positrons in solids and on solid surfaces. Rev. Mod. Phys. 66, 841 (1994).
20. F. Tuomisto, K. Saarinen, D.C. Look, and G.C. Farlow: Introduction and recovery ofpoint defects in electron-irradiated ZnO. Phys. Rev. B 72, 085206 (2005).
21. 1-irradiated ZnO. Phys. Rev. B 78, 035125 (2008).
22. K.M. Johansen, A. Zubiaga, I. Makkonen, F. Tuomisto, P.T. Neuvonen, K.E. Knutsen, E.V. Monakhov, A.Y. Kuznetsov, and B.G. Svensson: Identification of substitutional Li in n-type ZnO and its role as an acceptor. Phys. Rev. B 83, 245208 (2011).
23. K.M. Johansen, A. Zubiaga, F. Tuomisto, E.V. Monakhov, A.Y. Kuznetsov, and B.G. Svensson: H passivation of Li on Zn-site in ZnO: Positron annihilation spectroscopy and secondary ion mass spectrometry. Phys. Rev. B 84, 115203 (2011).
24. C. Rauch, I. Makkonen, and F. Tuomisto: Identifying vacancy complexes in compound semiconductors with positron annihilation spectroscopy: A case study of InN. Phys. Rev. B 84, 125201 (2011).
25. F. Tuomisto, A. Mycielski, and K. Grasza: Vacancy defects in (Zn, Mn)O. Superlattices Microstruct. 42, 218 (2007).
26. A. Zubiaga, F. Tuomisto, F. Plazaola, K. Saarinen, J.A. Garcia, J.F. Rommeluere, J. Zuñiga-Pérez, and V. Muñoz-San José: Zinc vacancies in the heteroepitaxy of ZnO on sapphire: Influence of the substrate orientation and layer thickness. Appl. Phys. Lett. 86, 042103 (2005).
27. A. Zubiaga, F. Tuomisto, J. Zuñiga-Pérez, and V. Muñoz-San José: Characterization of non-polar ZnO layers with positron annihilation spectroscopy. Acta Phys. Pol. A 114, 1457 (2008).
28. D.C. Look, K.D. Leedy, L. Vines, B.G. Svensson, A. Zubiaga, F. Tuomisto, D. Doutt, and L.J. Brillson: Self-compensation in semiconductors: The Zn-vacancy in Ga-doped ZnO. Phys. Rev. B 84, 115202 (2011).
29. 1-implanted ZnO probed by a slow positron beam. Phys. Rev. B 69, 035210 (2004).
30. 1 ion-implantation-induced defects in ZnO studied with a slow positron beam. J. Phys. Condens. Matter 16, S293 (2004).
31. Z.Q. Chen, A. Kawasuso, Y. Xu, H. Naramoto, X.L. Yuan, T. Sekiguchi, R. Suzuki, and T. Ohdaira: Production and recovery of defects in phosphorus-implanted ZnO. J. Appl. Phys. 97, 013528 (2005).
32. Z.Q. Chen, A. Kawasuso, Y. Xu, H. Naramoto, X.L. Yuan, T. Sekiguchi, R. Suzuki, and T. Ohdaira: Microvoid formation in hydrogen-implanted ZnO probed by a slow positron beam. Phys. Rev. B 71, 115213 (2005).
33. 1-implanted ZnO studied using a slow positron beam. Appl. Phys. Lett. 87, 091910 (2005).
34. 1-implanted ZnO single crystals studied by positron annihilation, Hall effect, and deep-level transient spectroscopy. Phys. Rev. B 74, 045208 (2006).
35. 1-implantation-induced defects in ZnO. Chin. Phys. Lett. 23, 675 (2006).
36. Z.Q. Chen, M. Maekawa, A.Kawasuso, S. Sakai, and H. Naramoto: Annealing process of ion-implantation-induced defects in ZnO: Chemical effect of the ion species. J. Appl. Phys. 99, 093507 (2006).
37. T.M. Børseth, F. Tuomisto, J.S. Christensen, W. Skorupa, E.V. Monakhov, B.G. Svensson, and A.Y. Kuznetsov: Deactivation of Li by vacancy clusters in ion-implanted and flash-annealed ZnO. Phys. Rev. B 74, 161202R (2006).
38. P.T. Neuvonen, L. Vines, V. Venkatachalapathy, A. Zubiaga, F. Tuomisto, A. Hallén, B.G. Svensson, and A.Y. Kuznetsov: Defect evolution and impurity migration in Na implanted ZnO. Phys. Rev. B 84, 205202 (2011).
39. xO alloys. J. Appl. Phys. 113, 032512 (2013).
40. N.H. Nickel: Unpublished.