Investigating the impact of rice blast disease on the livelihood of the local farmers in Greater Mwea region of Kenya

SpringerPlus

Volumn 2, Issue 1, 2013, Pages 1-13

  Kihoro, Joseph ^a   Bosco, Njoroge J ^a   Murage, Hunja ^a   Ateka, Elijah ^a   Makihara, Daigo ^b  

^a JOMO KENYATTA UNIVERSITY OF AGRICULTURE AND TECHNOLOGY   (Kenya)

^b NAGOYA UNIVERSITY   (Japan)

Author keywords

Geographical distribution; GPS; Livelihood; Rice blast disease; Socio economic activity

Indexed keywords

EID: 84881245114     PISSN: None     EISSN: 21931801     Source Type: Journal    
DOI: 10.1186/2193-1801-2-308     Document Type: Article

References (30)

1. Zhang SL, Ostling M: Metal silicides in CMOS technology: past, present, and future trends. Crit Rev Solid State Mat Sci 2003, 28:1-129.
2. Chen LJ: Silicide Technology for Integrated Circuits. London: The Institution of Electrical Engineers; 2004.
3. Zhang SL, Smith U: Self-aligned silicides for ohmic contacts in complementary metal-oxide-semiconductor technology. Vac J Sci Technol A 2004, 22:1361-1370.
4. Maszara WP: Fully silicided metal gates for high-performance CMOS technology: a review. J Electrochem Soc 2005, 152:G550-G555.
5. Schmitt AL, Higgins JM, Szczech JR, Jin S: Synthesis and applications of metal silicide nanowires. J Mater Chem 2010, 20:223-235.
6. Yamamoto K, Kohno H, Takeda S, Ichikawa S: Fabrication of iron silicide nanowires from nanowire templates. Appl Phys Lett 2006, 89:083107.
7. Lu KC, Wu WW, Wu HW, Tanner CM, Chang JP, Chen LJ, Tu KN: In-situ control of atomic-scale Si layer with huge strain in the nanoheterostructure NiSi/Si/NiSi through point contact reaction. Nano Lett 2007, 7:2389-2394.
8. Wu WW, Lu KC, Wang CW, Hsieh HY, Chen SY, Chou YC, Yu SY, Chen LJ, Tu KN: Growth of multiple metal/semiconductor nanoheterostructures through point and line contact reactions. Nano Lett 2010, 10:3984-3989.
9. Lu KC, Wu WW, Ouyang H, Lin YC, Huang Y, Wang CW, Wu ZW, Huang CW, Chen LJ, Tu KN: The influence of surface oxide on the growth of metal/semiconductor nanowires. Nano Lett 2011, 11:2753-2758.
10. Hsu SC, Hsin CL, Yu SY, Huang CW, Wang CW, Lu CM, Lu KC, Wu WW: Single-crystalline Ge nanowires and Cu3Ge/Ge nano-heterostructures. Cryst Eng Comm 2012, 14:4570-4574.
11. Wu WW, Lu KC, Chen KN, Yeh PH, Wang CW, Lin YC, Huang Y: Controlled large strain of Ni silicide/Si/Ni silicide nanowire heterostructures and their electron transport properties. Appl Phys Lett 2010, 97:203110.
12. Kim J, Lee ES, Han CS, Kang Y, Kim D, Anderson WA: Observation of Ni silicide formation and field emission properties of Ni silicide nanowires. Microelectron Eng 2008, 85:1709-1712.
13. Kim J, Anderson WA: Spontaneous nickel monosilicide nanowire formation by metal induced growth. Thin Solid Films 2005, 483:60-65.
14. Kim CJ, Kang K, Woo YS, Ryu KG, Moon H, Kim JM, Zang DS, Jo MH: Spontaneous chemical vapor growth of NiSi nanowires and their metallic properties. Adv Mater 2007, 19:3637-3642.
15. Kim J, Shin DH, Lee ES, Han CS, Park YC: Electrical characteristics of single and doubly connected Ni silicide nanowire grown by plasma-enhanced chemical vapor deposition. Appl Phys Lett 2007, 90:253103.
16. 2Si nanowires. Appl Phys A 2004, 79:1853-1856.
17. x nanowires from Ni seed layers. Nano Lett 2008, 8:431-436.
18. 2 nanowires. Appl Phys Lett 2005, 87:223113.
19. 2 nanowires: a potential field emitter and interconnect. Nano Lett 2006, 6:1637-1644.
20. 2 nanowires. Appl Phys Lett 2005, 86:243103.
21. Ouyang L, Thrall ES, Deshmukh MM, Park H: Vapor phase synthesis and characterization of ε-FeSi nanowires. Adv Mater 2006, 18:1437-1440.
22. 3 nanowires by a vapor transport method. J Am Chem Soc 2007, 129:8594-8599.
23. Szczech JR, Schmitt AL, Bierman MJ, Jin S: Single-crystal semiconducting chromium disilicide nanowires synthesized via chemical vapor transport. Chem Mater 2007, 19:3238-3243.
24. 2Si nanowires with low resistivity. Nano Lett 2007, 7:965-969.
25. Schmitt AL, Bierman MJ, Schmeisser D, Himpsel FJ, Jin S: Synthesis and properties of single-crystal FeSi nanowires. Nano Lett 2006, 6:1617-1621.
26. Seo K, Lee S, Yoon H, In J, Varadwaj KSK, Jo Y, Jung MH, Kim J, Kim B: Composition-tuned Co(n)Si nanowires: location-selective simultaneous growth along temperature gradient. ACS Nano 2009, 3:1145-1150.
27. Liang YH, Yu SY, Hsin CL, Huang CW, Wu WW: Growth of single-crystalline cobalt silicide nanowires with excellent physical properties. J Appl Phys 2011, 110:074302.
28. Tsai CI, Yeh PH, Wang CY, Wu HW, Chen US, Lu MY, Wu WW, Chen LJ, Wang ZL: Cobalt silicide nanostructures: synthesis, electron transport, and field emission properties. Cryst Growth Des 2009, 9:4514-4518.
29. Hsin CL, Yu SY, Wu WW: Cobalt silicide nanocables grown on Co films: synthesis and physical properties. Nanotechnology 2010, 21:485602.
30. Schmitt AL, Lei Z, Schmeiβer D, Himpsel FJ, Jin S: Metallic single-crystal CoSi nanowires via chemical vapor deposition of single-source precursor. J Phys Chem B 2006, 110:18142-18146.