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Volumn 483, Issue 1-2, 2005, Pages 60-65

Spontaneous nickel monosilicide nanowire formation by metal induced growth

Author keywords

DC magnetron sputtering; Low temperature; Metal Induced Growth (MIG); NiSi nanowires (NWs)

Indexed keywords

COMPOSITION; CRYSTAL STRUCTURE; DEPOSITION; GROWTH (MATERIALS); LOW TEMPERATURE EFFECTS; MAGNETRON SPUTTERING; NANOSTRUCTURED MATERIALS; NICKEL COMPOUNDS; RAMAN SPECTROSCOPY; SINGLE CRYSTALS;

EID: 18844446933     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2004.12.025     Document Type: Article
Times cited : (55)

References (21)
  • 10
    • 12744258008 scopus 로고    scopus 로고
    • Silicon nanowire growth at relatively low processing temperature
    • San Francisco, U.S.A., April 12-16, 2004
    • J. Kim, C. Ji, and W.A. Anderson Silicon Nanowire Growth at Relatively Low Processing Temperature, San Francisco, U.S.A., April 12-16, 2004 Materials Research Society Symposium Proceeding vol. 818 2004 M11.11
    • (2004) Materials Research Society Symposium Proceeding , vol.818
    • Kim, J.1    Ji, C.2    Anderson, W.A.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.