High sensitivity of middle-wavelength infrared photodetectors based on an individual InSb nanowire

Nanoscale Research Letters

Volumn 8, Issue 1, 2013, Pages

  Kuo, Cheng Hsiang ^a   Wu, Jyh Ming ^a   Lin, Su Jien ^a   Chang, Wen Chih ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

Electrochemical method; InSb nanowires; Metal semiconductor metal structure; Middle infrared; Photodetectors

Indexed keywords

CRYSTAL STRUCTURE; III-V SEMICONDUCTORS; INDIUM ANTIMONIDES; INFRARED DETECTORS; METALS; NANOWIRES; NARROW BAND GAP SEMICONDUCTORS; PHOTODETECTORS; PHOTONS; SEMICONDUCTING INDIUM; SEMICONDUCTING INDIUM COMPOUNDS; SINGLE CRYSTALS;

ELECTROCHEMICAL METHODS; ELECTRON CONCENTRATION; HIGH SURFACE-TO-VOLUME RATIO; INFRARED PHOTODETECTOR; INSB NANOWIRE; METAL SEMICONDUCTOR METAL; METAL-SEMICONDUCTOR-METAL STRUCTURES; MIDDLE INFRARED;

SEMICONDUCTING ANTIMONY COMPOUNDS;

EID: 84881235489     PISSN: 19317573     EISSN: 1556276X     Source Type: Journal    
DOI: 10.1186/1556-276X-8-327     Document Type: Article

References (51)

1. Chen CY, Huang JH, Lai KY, Jen YJ, Liu CP, He JH: Giant optical anisotropy of oblique-aligned ZnO nanowire arrays. Opt Express 2012, 20:2015-2024.
2. Chen MW, Chen CY, Lien DH, Ding Y, He JH: Photoconductive enhancement of single ZnO nanowire through localized Schottky effects. Opt Express 2010, 18:14836-14841.
3. Chen CY, Chen MW, Ke JJ, Lin CA, Retamal JRD, He JH: Surface effects on optical and electrical properties of ZnO nanostructures. Pure Appl Chem 2010, 82:2055-2073.
4. Chen CY, Retamal JRD, Wu IW, Lien DH, Chen MW, Ding Y, Chueh YL, Wu CI, He JH: Probing surface band bending of surface-engineered metal oxide nanowires. ACS Nano 2012, 6:9366-9372.
5. Li L, Auer E, Liao M, Fang X, Zhai T, Gautam UK, Lugstein A, Koide Y, Bandoa Y, Golberg D: Deep-ultraviolet solar-blind photoconductivity of individual gallium oxide nanobelts. Nanoscale 2011, 3:1120-1126.
6. Wu JM: A room temperature ethanol sensor made from p-type Sb-doped SnO2 nanowires. Nanotechnology 2010, 21:235501.
7. Liu M, Wang H, Yan C, Will G, Bell J: One-step synthesis of titanium oxide with trilayer structure for dye-sensitized solar cells. Appl Phys Lett 2011, 98:133113.
8. Wu JM, Kuo CH: Ultraviolet photodetectors made from SnO2 nanowires. Thin Solid Films 2009, 517:3870-3873.
9. Kind H, Yan H, Messer B, Law M, Yang P: Nanowire ultraviolet photodetectors and optical switches. Adv Mater 2002, 14:158-160.
10. Fang X, Xiong S, Zhai T, Bando Y, Liao M, Gautam UK, Koide Y, Zhang X, Qian Y, Golberg D: High-performance blue/ultraviolet-light-sensitive ZnSe-nanobelt photodetectors. Adv Mater 2009, 21:5016-5502.
11. Jie JS, Zhang WJ, Jiang Y, Meng XM, Li YQ, Lee ST: Photoconductive characteristics of single-crystal CdS nanoribbons. Nano Lett 2006, 6:1887-1892.
12. Wang SB, Hsiao CH, Chang SJ, Lam KT, Wen KH, Hung SC, Young SJ, Huang BR: A CuO nanowire infrared photodetector. Sensor Actuat A-Phys 2011, 171:207-211.
13. Rode DL: Electron transport in InSb, InAs, and InP. Phys Rev B 1971, 3:3287-3299.
14. Zhang XR, Hao YF, Meng GW, Zhang LD: Fabrication of highly ordered InSb nanowire arrays by electrodeposition in porous anodic alumina membranes. J Electrochem Soc 2005, 152:C664-C668.
15. Vogel AT, Boor J, Becker M, Wittemann JV, Mensah SL, Werner P, Schmidt V: Agassisted CBE growth of ordered InSb nanowire arrays. Nanotechnology 2011, 22:015605.
16. Vaddiraju S, Sunkara MK, Chin AH, Ning CZ, Dholakia GR, Meyyappan M: Synthesis of group III antimonide nanowires. J Phys Chem C 2007, 111:7339-7347.
17. Wang YN, Chi JH, Banerjee K, Grützmacher D, Schäpers T, Lu JG: Field effect transistor based on single crystalline InSb nanowire. J Mater Chem 2011, 21:2459-2462.
18. Caroff P, Wagner JB, Dick KA, Nilsson HA, Jeppsson M, Deppert K, Samuelson L, Wallenberg LR, Wernersson LE: High-quality InAs/InSb nanowire heterostructures grown by metal-organic vapor-phase epitaxy. Small 2008, 4:878-882.
19. Nilsson HA, Caroff P, Thelander C, Lind E, Karlström O, Wernersson LE: Temperature dependent properties of InSb and InAs nanowire field-effect transistors. Appl Phys Lett 2010, 96(153505):1-3.
20. Svensson J, Anttu N, Vainorius N, Borg BM, Wernersson LE: Diameter-dependent photocurrent in InAsSb nanowire infrared photodetectors. Nano Lett 2013, 13:1380-1385.
21. Chen H, Sun X, Lai KWC, Meyyappan M, Xi N: Infrared detection using an InSb nanowire. In Proceedings of IEEE Nanotechnology Materials and Devices Conference: June 2-5 2009; Traverse City, Mi, USA. New York: IEEE; 2009:212-216.
22. Jin YJ, Zhang DH, Chen XZ, Tang XH: Sb antisite defects in InSb epilayers prepared by metalorganic chemical vapor deposition. J Cryst Growth 2011, 318:356-359.
23. Rahul, Vishwakarma SR, Verma AK, Tripathi RSN: Energy band gap and conductivity measurement of InSb thin films deposited by electron beam evaporation technique. M J Condensed Matter 2010, 13:34-37.
24. Vishwakarma SR, Verma AK, Tripathi RSN, Das S, Rahul: Study of structural property of n-type indium antimonide thin films. Indian J Pure and Appl Phys 2012, 50:339-346.
25. Kuo CH, Wu JM, Lin SJ: Room temperature-synthesized vertically aligned InSb nanowires: electrical transport and field emission characteristics. Nanoscale Res Lett 2013, 8:69.
26. Lim T, Lee S, Meyyappan M, Ju S: Tin oxide and indium oxide nanowire transport characteristics: influence of oxygen concentration during synthesis. Semicond Sci Technol 2012, 27:035018.
27. Stern E, Cheng G, Cimpoiasu E, Klie R, Guthrie S, Klemic J, Kretzschma I, Steinlauf E, Turner-Evans D, Broomfield E, Hyland J, Koudelka R, Boone T, Young M, Sanders A, Munden R, Lee T, Routenberg D, Reed MA: Electrical characterization of single GaN nanowires. Nanotechnology 2005, 16:2941-2953.
28. Yuan GD, Zhang WJ, Jie JS, Fan X, Zapien JA, Leung YH, Luo LB, Wang PF, Lee CS, Lee ST: p-type ZnO nanowire arrays. Nano Lett 2008, 8:8.
29. Thelander C, Caroff P, Plissard S, Dick KA: Electrical properties of InAs1-xSbx and InSb nanowires grown by molecular beam epitaxy. Appl Phys Lett 2012, 100:232105-1.
30. Das SR, Delker CJ, Zakharov D, Chen YP, Sands TD, Janes DB: Room temperature device performance of electrodeposited InSb nanowire field effect transistors. Appl Phys Lett 2011, 98:243504-1.
31. Plissard SR, Slapak DR, Verheijen MA, Hocevar M, Immink GWG, Weperen I, Nadj-Perge S, Frolov SM, Kouwenhoven LP, Bakkers EPAM: From InSb nanowires to nanocubes: looking for the sweet spot. Nano Lett 2012, 12:1794-1798.
32. Khanal DR, Levander AX, Yu KM, Liliental-Weber Z, Walukiewicz W, Grandal J, Sánchez-García MA, Calleja E, Wu J: Decoupling single nanowire mobilities limited by surface scattering and bulk impurity scattering. Appl Phys Lett 2011, 110:033705.9.
33. Wu JM, Liou LB: Room temperature photo-induced phase transitions of VO2 nanodevices. J Mater Chem 2011, 21:5499-5504.
34. Luo LB, Liang X, Jie JS: Sn-catalyzed synthesis of SnO2 nanowires and their optoelectronic characteristics. Nanotechnology 2011, 22:485701.
35. Chang LW, Sung YC, Yeh JW, Shih HC: Enhanced optoelectronic performance from the Ti-doped ZnO nanowires. J Appl Phys 2011, 109:074318.
36. Li L, Lee PS, Yan C, Zhai T, Fang X, Liao M, Koide Y, Bando Y, Golberg D: Ultrahighperformance solar-blind photodetectors based on individual single-crystalline In2Ge2O7 nanobelts. Adv Mater 2010, 22:5145-5149.
37. Li QH, Gao T, Wang TH: Optoelectronic characteristics of single CdS nanobelts. Appl Phys Lett 2005, 86:193109.
38. Xie X, Kwok SY, Lu Z, Liu Y, Cao Y, Luo L, Zapien JA, Bello I, Lee CS, Lee ST, Zhang W: Visible-NIR photodetectors based on CdTe nanoribbons. Nanoscale 2012, 4:2914-2919.
39. Li L, Fang X, Zhai T, Liao M, Gautam UK, Wu X, Koide Y, Bando Y, Golberg D: Electrical transport and high-performance photoconductivity in individual ZrS2 nanobelts. Adv Mater 2010, 22:4151-4156.
40. Liang Y, Liang H, Xiao X, Hark S: The epitaxial growth of ZnS nanowire arrays and their applications in UV-light detection. J Mater Chem 2012, 22:1199.
41. Zhang C, Wang S, Yang L, Liu Y, Xu T, Ning Z, Zak A, Zhang Z, Tenne R, Chen Q: High-performance photodetectors for visible and near-infrared lights based on individual WS2 nanotubes. Appl Phys Lett 2012, 100:243101.
42. Binet F, Duboz JY, Rosencher E, Scholz F, Härle V: Mechanisms of recombination in GaN photodetectors. Appl Phys Lett 1996, 69:1202.
43. Jie J, Zhang W, Bello I, Lee CS, Lee ST: One-dimensional II-VI nanostructures: synthesis, properties and optoelectronic applications. Nano Today 2010, 5:313-336.
44. Jiang Y, Zhang WJ, Jie JS, Meng XM, Fan X, Lee ST: Photoresponse properties of CdSe single-nanoribbon photodetectors. Adv Funct Mater 2007, 17:1795-1800.
45. Li QH, Gao T, Wang YG, Wang TH: Adsorption and desorption of oxygen probed from ZnO nanowire films by photocurrent measurements. Appl Phys Lett 2005, 86:123117.
46. Wu JM, Chen YR, Lin YH: Rapidly synthesized ZnO nanowires by ultraviolet decomposition process in ambient air for flexible photodetector. Nanoscale 2011, 3:1053-1058.
47. Hasan K, Alvil NH, Lu J, Nur O, Willander M: Single nanowire-based UV photodetectors for fast switching. Nanoscale Res Lett 2011, 6:348.
48. Zhang J, Chen R, Xu X, Li D, Sun H, Xiong Q: Synthesis and optical properties of II-VI 1D nanostructures. Nanoscale 2012, 4:1422.
49. Li C, Bando Y, Liao M, Koide Y, Golberg D: Visible-blind deep-ultraviolet Schottky photodetector with a photocurrent gain based on individual Zn2GeO4 nanowire. Appl Phys Lett 2010, 97:161102.
50. Das SN, Moon KJ, Kar JP, Choi JH, Xiong J, Lee TI, Myoung JM: ZnO single nanowire-based UV detectors. Appl Phys Lett 2010, 97:022103.
51. Hu Y, Zhou J, Yeh PH, Li Z, Wei TY, Wang ZL: Supersensitive, fast-response nanowire sensors by using Schottky contacts. Adv Mater 2010, 22:3327-3332.