Room temperature-synthesized vertically aligned InSb nanowires: Electrical transport and field emission characteristics

Nanoscale Research Letters

Volumn 8, Issue 1, 2013, Pages 1-8

  Kuo, Cheng Hsiang ^a   Wu, Jyh Ming ^b   Lin, Su Jien ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b FENG CHIA UNIVERSITY   (Taiwan)

Author keywords

Electrical transport; Electrochemical method; Electron accumulation layer; Field emission; InSb nanowires

Indexed keywords

CARRIER CONCENTRATION; CARRIER MOBILITY; ELECTRON TUNNELING; ELECTRONS; FIELD EMISSION; III-V SEMICONDUCTORS; INDIUM ANTIMONIDES; NANOWIRES; NARROW BAND GAP SEMICONDUCTORS; SEMICONDUCTING ANTIMONY COMPOUNDS; SINGLE CRYSTALS;

ELECTRICAL TRANSPORT; ELECTROCHEMICAL METHODS; ELECTRON ACCUMULATION; FIELD EMISSION PROPERTY; FIELD-EMISSION CHARACTERISTICS; FOURIER TRANSFORM INFRARED SPECTRA; INSB NANOWIRE; METAL SEMICONDUCTOR METAL;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 84875186064     PISSN: 19317573     EISSN: 1556276X     Source Type: Journal    
DOI: 10.1186/1556-276X-8-69     Document Type: Article

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