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Journal of Applied Physics

Volumn 109, Issue 7, 2011, Pages

Enhanced optoelectronic performance from the Ti-doped ZnO nanowires

(4) Chang, Li Wei a Sung, Yung Chiao a Yeh, Jien Wei a Shih, Han C a,b

a NATIONAL TSING HUA UNIVERSITY (Taiwan)

b CHINESE CULTURE UNIVERSITY (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

AS-GROWN; CATHODOLUMINESCENCE SPECTRA; DOPED ZNO; ELECTRICAL MEASUREMENT; ELECTRICAL/OPTICAL PROPERTIES; EMISSION PEAKS; ENERGY DISPERSIVE X-RAY SPECTROSCOPY; I - V CURVE; IMPLANTATION PROCESS; METAL VAPOR VACUUM ARCS; ONE-DIMENSIONAL NANOSTRUCTURE; POLE PIECE; ROOM TEMPERATURE; TI DOPING; ZNO; ZNO NWS;

CRYSTAL STRUCTURE; ELECTRIC PROPERTIES; ELECTRIC WIRE; ENERGY DISPERSIVE SPECTROSCOPY; ION IMPLANTATION; NANOWIRES; OPTOELECTRONIC DEVICES; THERMAL EVAPORATION; TITANIUM; TITANIUM OXIDES; VACUUM EVAPORATION; VAPORS; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS; X RAY SPECTROSCOPY; ZINC OXIDE;

DOPING (ADDITIVES);

EID: 79955451090 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3554686 Document Type: Conference Paper

Times cited : (29)

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