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Volumn 25, Issue 29, 2013, Pages 4001-4005
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Ultralow contact resistance at an epitaxial metal/oxide heterojunction through interstitial site doping
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Author keywords
first principles modeling; metal oxide interfaces; ohmic contacts; scanning transmission electron microscopy; x ray and ultraviolet photoemission
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Indexed keywords
ATOMIC PLANES;
FIRST-PRINCIPLES MODELING;
INTERSTITIAL SITES;
NB-DOPED SRTIO;
NEAR SURFACE REGIONS;
SCANNING TRANSMISSION ELECTRON MICROSCOPY;
ULTRA-LOW CONTACT RESISTANCES;
ULTRAVIOLET PHOTOEMISSION;
EPITAXIAL GROWTH;
FILM GROWTH;
HETEROJUNCTIONS;
NIOBIUM;
OHMIC CONTACTS;
SEMICONDUCTOR DOPING;
TRANSMISSION ELECTRON MICROSCOPY;
CONTACT RESISTANCE;
METAL;
OXIDE;
ARTICLE;
CHEMISTRY;
EQUIPMENT DESIGN;
EQUIPMENT FAILURE;
FIRST-PRINCIPLES MODELING;
IMPEDANCE;
MATERIALS TESTING;
METAL/OXIDE INTERFACES;
MICROELECTRODE;
OHMIC CONTACTS;
SCANNING TRANSMISSION ELECTRON MICROSCOPY;
X-RAY AND ULTRAVIOLET PHOTOEMISSION;
FIRST-PRINCIPLES MODELING;
METAL/OXIDE INTERFACES;
OHMIC CONTACTS;
SCANNING TRANSMISSION ELECTRON MICROSCOPY;
X-RAY AND ULTRAVIOLET PHOTOEMISSION;
ELECTRIC IMPEDANCE;
EQUIPMENT DESIGN;
EQUIPMENT FAILURE ANALYSIS;
MATERIALS TESTING;
METALS;
MICROELECTRODES;
OXIDES;
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EID: 84881186344
PISSN: 09359648
EISSN: 15214095
Source Type: Journal
DOI: 10.1002/adma.201301030 Document Type: Article |
Times cited : (30)
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References (30)
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