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Japanese Journal of Applied Physics

Volumn 50, Issue 8 PART 1, 2011, Pages

Improvement of electron mobility above 100,000 cm2 V -1 s-1 in MgxZn1-xO/ZnO heterostructures

(5) Akasaka, Shunsuke a Tsukazaki, Atsushi a,b,c Nakahara, Ken a Ohtomo, Akira a,d Kawasaki, Masashi a,b,c,e

a ROHM CO LTD (Japan)

b UNIVERSITY OF TOKYO (Japan)

c JAPAN SCIENCE AND TECHNOLOGY AGENCY (Japan)

d TOKYO INSTITUTE OF TECHNOLOGY (Japan)

e TOHOKU UNIVERSITY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALLOY DISORDER SCATTERING; GATE VOLTAGES; GROWTH CONDITIONS; HETERO INTERFACES; INTERFACE ROUGHNESS; IONIZED IMPURITY SCATTERING; TWO-DIMENSIONAL ELECTRON GAS (2DEG); ZNO;

ELECTRON MOBILITY; ELECTRONS; IONIZATION OF GASES; ZINC; ZINC OXIDE;

TWO DIMENSIONAL ELECTRON GAS;

EID: 80051965090 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.50.080215 Document Type: Article

Times cited : (24)

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