Electromigration comparison of selective CVD cobalt capping with PVD Ta(N) and CVD cobalt liners on 22nm-groundrule dual-damascene Cu interconnects

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2013, Pages

  Simon, A H ^a   Bolom, T ^a   Niu, C ^b   Baumann, F H ^a   Hu, C K ^d   Parks, C ^a   Nag, J ^a   Kim, H ^c   Lee, J Y ^a   Yang, C C ^d   Nguyen, S ^a   Shobha, H K ^a   Nogami, T ^d   Guggilla, S ^e   Ren, J ^e   Sabens, D ^e   Aubuchon, J F ^e  

^a IBM MICROELECTRONICS   (United States)

^b STMICROELECTRONICS   (Italy)

^c SAMSUNG Electronics   (South Korea)

^d IBM RESEARCH   (United States)

^e APPLIED MATERIALS INC   (United States)

Author keywords

formatting; insert; style; styling

Indexed keywords

COPPER INTERCONNECTS; ELECTRICAL YIELD; FORMATTING; INSERT; SECONDARY ION MASS SPECTROSCOPIES (SIMS); STYLE; STYLING; TECHNOLOGY NODES;

ACTIVATION ENERGY; COBALT; ELECTROMIGRATION; SECONDARY ION MASS SPECTROMETRY; SURFACE SEGREGATION;

TANTALUM;

EID: 84880979434     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IRPS.2013.6532002     Document Type: Conference Paper

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