Development of selective Co CVD capping process for reliability improvement of advanced Cu interconnect

Advanced Metallization Conference (AMC)

Volumn , Issue , 2009, Pages 19-23

  Nakazawa, Emiko ^a   Arita, Koji ^a   Tsuchiya, Yasuaki ^a   Kakuhara, Yumi ^a   Yokogawa, Shinji ^a   Kurokawa, Tetsuya ^a   Sasaki, Nobuyuki ^b   Ganguli, Seshadri ^c   Ha, Hyoung Chan ^c   Wei, Ti Lee ^c   Yu, Sang Ho ^c   Sekine, Makoto ^a  

^a RENESAS TECHNOLOGY CORP   (Japan)

^b Applied Materials Japan   (Japan)

^c APPLIED MATERIALS INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

32-NM NODE; CAPPING PROCESS; CU INTERCONNECT; RELIABILITY IMPROVEMENT; TDDB LIFETIME;

METALLIZING; OPTICAL INTERCONNECTS;

CHEMICAL VAPOR DEPOSITION;

EID: 70349939383     PISSN: 15401766     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

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2. T. Usami et. al., Proc. of IITC2006, p125 (2006)
3. C. K. Hu et. al., Appl. Phys. Lett., Vol.84, p4986 (2004)
4. S. Yokogawa et. al.,IEEE transaction on electron devices vol.55, p350
5. H. Tsuchiya et al., Microelectron. Reliab., Vol.46, p1415 (2006)