CVD Co and its application to Cu damascene interconnections

2010 IEEE International Interconnect Technology Conference, IITC 2010

Volumn , Issue , 2010, Pages

  Nogami, T ^a,b   Maniscalco, J ^a   Madan, A ^c   Flaitz, P ^c   DeHaven, P ^c   Parks, C ^c   Tai, L ^c   St Lawrence, B ^c   Davis, R ^c   Murphy, R ^c   Shaw, T ^b   Cohen, S ^b   Hu, C K ^b   Cabral Jr , C ^b   Chiang, S ^g   Kelly, J ^a   Zaitz, M ^c   Schmatz, J ^a   Choi, S ^c   Tsumura, K ^d   Penny, C ^a   Chen, H C ^a   Canaperi, D ^a   Vo, T ^a   Ito, F ^f   Straten, O ^a   Simon, A ^c   Rhee, S H ^c   Kim, B Y ^e   Bolom, T ^c   Ryan, V ^c   Ma, P ^g   Ren, J ^g   Aubuchon, J ^g   Fine, J ^g   Kozlowski, P ^a   Spooner, T ^a   Edelstein, D ^b   more..

^a IBM   (United States)

^b IBM T J WATSON RESEARCH CENTER   (United States)

^c IBM MICROELECTRONICS   (United States)

^d Toshiba America Inc   (United States)

^e STMICROELECTRONICS   (Italy)

^f NEC Corporation of America   (United States)

^g APPLIED MATERIALS INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AFM; BARRIER PERFORMANCE; CO FILMS; CO-OXIDES; COPPER FILMS; COPPER INTERCONNECTS; CU DAMASCENE; DAMASCENE CU; MATERIAL INTERACTIONS; MICRO-ANALYTICAL TECHNIQUES; NANO SCALE; PROCESSING TEMPERATURE; VOLTAGE SWEEP; XPS; XRD;

AGGLOMERATION; CARBON FILMS; COPPER; DEFECT DENSITY; METALLIC FILMS; OXYGEN; PROCESSING; SECONDARY ION MASS SPECTROMETRY; TANTALUM; TANTALUM COMPOUNDS;

COBALT;

EID: 77955632274     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IITC.2010.5510584     Document Type: Conference Paper

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