CVD Co capping layers for Cu/low-k interconnects: Cu em enhancement vs. Co thickness

2011 IEEE International Interconnect Technology Conference and 2011 Materials for Advanced Metallization, IITC/MAM 2011

Volumn , Issue , 2011, Pages

  Yang, C C ^a,b   Baumann, F ^c   Wang, P C ^c   Lee, Sy ^b   Ma, P ^b   Aubuchon, J ^b   Edelstein, D ^a,b  

^a IBM RESEARCH   (United States)

^b IBM Microelectronics ^*  (United States)

^c APPLIED MATERIALS INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPPING LAYER; CHEMICAL VAPOR; CO DEPOSITION; CO FILMS; CU/LOW-K INTERCONNECTS; DEPOSITION PRESSURES; DIELECTRIC SURFACE; ELECTROMIGRATION RESISTANCE; LIFETIME ENHANCEMENT; PRE-CLEAN PROCESS;

CHEMICAL VAPOR DEPOSITION; COPPER; FILMS; METALLIZING;

COBALT;

EID: 80052055382     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IITC.2011.5940289     Document Type: Conference Paper

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