Selective chemical vapor deposition-grown Ru for Cu interconnect capping applications

Electrochemical and Solid-State Letters

Volumn 13, Issue 5, 2010, Pages

  Yang, C C ^a   McFeely, F R ^a   Wang, P C ^b   Chanda, K ^b   Edelstein, D C ^a  

^a IBM RESEARCH   (United States)

^b IBM MICROELECTRONICS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION PROCESS; COMPREHENSIVE EVALUATION; CU INTERCONNECT; CU-INTERCONNECTS; DEPOSITION TEMPERATURES; METAL CAPPING LAYERS; NANOELECTRONIC APPLICATIONS; SUBSTRATE MATERIAL; ULTRALARGE-SCALE INTEGRATED CIRCUITS; X RAY FLUORESCENCE SPECTROSCOPY;

FLUORESCENCE SPECTROSCOPY; RUTHENIUM;

CHEMICAL VAPOR DEPOSITION;

EID: 77949694168     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3339450     Document Type: Article

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