Electromigration extendibility of Cu(Mn) alloy-seed interconnects, and understanding the fundamentals

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2012, Pages

  Nogami, T ^a   Penny, C ^a   Madan, A ^f   Parks, C ^f   Li, J ^a   Flaitz, P ^f   Uedono, A ^c   Chiang, S ^e   He, M ^b   Simon, A ^f   Bolom, T ^b   Ryan, T ^b   Ito, F ^d   Christiansen, C ^b   Tai, L ^d   Hu, C K ^g   Kim, H ^b   Zhang, X ^b   Tanwar, K ^b   Choi, S ^f   Baumann, F ^f   Davis, R ^f   Kelly, J ^a   Murphy, R ^f   Molis, S ^f   Rowland, J ^f   Dehaven, P ^f   Canaperi, D ^a   Spooner, T ^a   Edelstein, D ^g   more..

^a IBM   (United States)

^b IBM MICROELECTRONICS   (United States)

^c UNIVERSITY OF TSUKUBA   (Japan)

^d INTERSIL CORPORATION   (United States)

^e APPLIED MATERIALS INC   (United States)

^f IBM RESEARCH   (United States)

^g IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COPPER ALLOYS; ELECTRON DEVICES; INTEGRATED CIRCUIT INTERCONNECTS; INTERFACE STATES; MANGANESE ALLOYS; SEGREGATION (METALLOGRAPHY); SILICON COMPOUNDS;

CU ALLOY; CU LAYERS; METALLIC LAYERS; METALLIC STATE; MN SEGREGATIONS;

NITROGEN COMPOUNDS;

EID: 84876129487     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2012.6479161     Document Type: Conference Paper

References (6)

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3. J. Koike et al., Appl. Phys. Lett. , 87, 041911, 200
4. A. Uedono et al, JAP vol 95 #3 p913 2004
5. R. Gordon et al, AMC 2010
6. T. Nogami et al., IEEE IITC 2010 3-1