SCOPUS 정보 검색 플랫폼

2012 IEEE International Interconnect Technology Conference, IITC 2012

Volumn , Issue , 2012, Pages

In-situ metal/dielectric capping process for electromigration enhancement in Cu interconnects

(10) Yang, C C a,d Chen, F b Li, B b Shobha, H a Nguyen, S a Grill, A a Ye, W c Aubuchon, J c Shek, M c Edelstein, D a

a IBM RESEARCH (United States)

b IBM MICROELECTRONICS (United States)

c APPLIED MATERIALS INC (United States)

d NONE (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DIELECTRIC MATERIALS; ELECTROMIGRATION; SILICON; SILICON CARBIDE;

CAP THICKNESS; CAPPING LAYER; CAPPING PROCESS; CHEMICAL VAPOR; CU-INTERCONNECTS; LIFETIME ENHANCEMENT; METAL DEPOSITION; TIME DEPENDENT DIELECTRIC BREAKDOWN;

INTEGRATED CIRCUIT INTERCONNECTS;

EID: 84866663444 PISSN: None EISSN: None Source Type: Conference Proceeding
DOI: 10.1109/IITC.2012.6251568 Document Type: Conference Paper

Times cited : (3)

References (6)

1
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- (2005) IEEE Trans. of Device and Mat. Reliability , vol.5 , pp. 113-118
- Lloyd, J.R.¹ Lane, M.W.² Liniger, E.G.³ Hu, C.-K.⁴ Shaw, T.M.⁵ Rosenberg, R.⁶

2
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- Development of selective Co CVD capping process for reliability improvement of advanced Cu interconnect
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- Proc. MRS Advanced Metallization Conf., 2008 , pp. 19-23
- Nakazawa, E.¹ Arita, K.² Tsuchiya, Y.³ Sekine, M.⁴

3
- 77949694168
- Selective Chemical Vapor Deposition-Grown Ru for Cu Interconnect Capping Applications
- Mar.
- C.-C. Yang, F. R. McFeely, P.-C. Wang, K. Chanda, and D. C. Edelstein, "Selective Chemical Vapor Deposition-Grown Ru for Cu Interconnect Capping Applications," Electrochem. Solid-State Lett., vol. 13, pp. D33-D35, Mar. 2010.
- (2010) Electrochem. Solid-State Lett. , vol.13
- Yang, C.-C.¹ McFeely, F.R.² Wang, P.-C.³ Chanda, K.⁴ Edelstein, D.C.⁵

4
- 33947329491
- Selectivity Enhancement of Electroless Co Deposition for Cu Capping Process via Spontaneous Diazonium Ion Reduction
- Feb.
- S. Y. Chang, C. C. Wan, and Y. Y. Wang, "Selectivity Enhancement of Electroless Co Deposition for Cu Capping Process via Spontaneous Diazonium Ion Reduction," Electrochem. Solid-State Lett., vol. 10, pp. D43-D46, Feb. 2007.
- (2007) Electrochem. Solid-State Lett. , vol.10
- Chang, S.Y.¹ Wan, C.C.² Wang, Y.Y.³

5
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- Physical, Electrical, and Reliability Characterization of Ru for Cu Interconnects
- C.-C. Yang, T. Spooner, S. Ponoth, and, D. Edelstein, "Physical, Electrical, and Reliability Characterization of Ru for Cu Interconnects," in Proc. IEEE Int. Interconnect Technology Conf., 2006, pp. 187-190.
- Proc. IEEE Int. Interconnect Technology Conf., 2006 , pp. 187-190
- Yang, C.-C.¹ Spooner, T.² Ponoth, S.³ Edelstein, D.⁴

6
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- C.-C. Yang, F. Baumann, P.-C. Wang, SY Lee, P. Ma, J. AuBuchon, and D. Edelstein, "Characterization of Copper Electromigration
- Characterization of Copper Electromigration
- Yang, C.-C.¹ Baumann, F.² Wang, P.-C.³ Lee, S.Y.⁴ Ma, P.⁵ AuBuchon, J.⁶ Edelstein, D.⁷

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.