Electronic structure and van der Waals interactions in the stability and mobility of point defects in semiconductors

Physical Review Letters

Volumn 111, Issue 4, 2013, Pages

  Gao, Wang ^a   Tkatchenko, Alexandre ^a  

^a FRITZ HABER INSTITUT DER MAX PLANCK GESELLSCHAFT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DEFECT FORMATION ENERGIES; DEFECTS IN SEMICONDUCTORS; EXPERIMENTAL VALUES; HARTREE-FOCK EXCHANGES; HYBRID FUNCTIONALS; MIGRATION BARRIERS; VAN DER WAALS INTERACTION; VAN DER WAALS INTERACTIONS;

DEFECTS; ELECTRONIC STRUCTURE; POINT DEFECTS;

VAN DER WAALS FORCES;

EID: 84880872726     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.111.045501     Document Type: Article

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