DFT study of the effect of hydrostatic pressure on formation and migration enthalpies of intrinsic point defects in single crystal Si

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 9, Issue 10-11, 2012, Pages 1947-1951

  Sueoka, Koji ^a   Kamiyama, Eiji ^a   Kariyazaki, Hiroaki ^a   Vanhellemont, Jan ^b  

^a OKAYAMA PREFECTURAL UNIVERSITY   (Japan)

^b GHENT UNIVERSITY   (Belgium)

Author keywords

Enthalpy; Intrinsic point defects; Pressure; Single crystal Si

Indexed keywords

DENSITY FUNCTIONAL THEORY CALCULATIONS; DFT STUDY; DIFFUSION OF VACANCIES; EQUILIBRIUM CONCENTRATION; FORMATION ENERGIES; FORMATION ENTHALPY; INTRINSIC POINT DEFECTS; SELF-INTERSTITIAL; SINGLE-CRYSTAL SI; SUPER CELL;

DENSITY FUNCTIONAL THEORY; ENTHALPY; HYDROSTATIC PRESSURE; POINT DEFECTS; PRESSURE; SILICON; SILICON WAFERS;

SINGLE CRYSTALS;

EID: 84867934175     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.201200071     Document Type: Article

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