Resonant addressing and manipulation of silicon vacancy qubits in silicon carbide

Physical Review Letters

Volumn 109, Issue 22, 2012, Pages

  Riedel, D ^a   Fuchs, F ^a   Kraus, H ^a   Vath S ^a   Sperlich, A ^a   Dyakonov, V ^a,b   Soltamova, A A ^c   Baranov, P G ^c   Ilyin, V A ^d   Astakhov, G V ^a  

^a UNIVERSITY OF WÜRZBURG   (Germany)

^b BAVARIAN CENTER FOR APPLIED ENERGY RESEARCH ZAE BAYERN   (Germany)

^c IOFFE INSTITUTE   (Russian Federation)

^d SAINT PETERSBURG ELECTROTECHNICAL UNIVERSITY LETI   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

QUANTUM APPLICATIONS; QUANTUM-INFORMATION PROCESSING; RESONANCE CONDITION; RESONANCE TECHNIQUE; SPIN MEMORIES; SPIN PROPERTIES; VACANCY DEFECTS;

MAGNETIC RESONANCE; QUANTUM COMPUTERS; QUANTUM OPTICS; SILICON; SILICON CARBIDE;

VACANCIES;

EID: 84870156805     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.109.226402     Document Type: Article

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