Defect transition energies and the density of electronic states in hydrogenated amorphous silicon

Journal of Non-Crystalline Solids

Volumn 299-302, Issue , 2002, Pages 621-625

  Mensing, G ^a,b   Gilligan, J ^a   Hari, P ^a,c   Hurt, E ^a,d   Lupke G ^a,e   Pantelides, S ^a   Tolk, N ^a   Taylor, P C ^f  

^a VANDERBILT UNIVERSITY   (United States)

^b University of Wisconsin Madison   (United States)

^c CALIFORNIA STATE UNIVERSITY   (United States)

^d Arkansas Power Electronics International Inc   (United States)

^e Dept of Economics and Thomas Jefferson Program in Public Policy at the College of William and Mary   (United States)

^f UNIVERSITY OF UTAH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION; CRYSTAL DEFECTS; ELECTRONIC DENSITY OF STATES; ENERGY GAP; HYDROGENATION; PHOTOLUMINESCENCE;

PHOTOLUMINESCENCE EXCITATION (PLE) SPECTROSCOPY;

AMORPHOUS SILICON;

EID: 0036539735     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-3093(01)01207-8     Document Type: Article

References (16)